Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | APLNR | P35414 | 1/20 | 0.53 |
| ▸ | CA12 | O43570 | 1/20 | 0.50 |
| ▸ | CA1 | P00915 | 1/20 | 0.50 |
| ▸ | CA2 | P00918 | 1/20 | 0.50 |
| ▸ | CA7 | P43166 | 1/20 | 0.50 |
| ▸ | CA9 | Q16790 | 1/20 | 0.50 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.50 |
| ▸ | HTR2A | P28223 | 1/20 | 0.45 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.44 |
| ▸ | MAPT | P10636 | 1/20 | 0.44 |
| ▸ | IDO1 | P14902 | 2/20 | 0.44 |
| ▸ | MEN1 | O00255 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.42 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.41 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686106 | 0.81 | APLNR (0.47) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL683451 | 0.81 | ABCB11 (0.40) | HTR2AALDH1A1IDO1KDM4E | |
| SCHEMBL29042697 | 0.80 | APLNR (0.53) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL14208833 | 0.79 | APLNR (0.42) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL4003210 | 0.78 | APLNR (0.63) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL5998553 | 0.78 | APLNR (0.63) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL23720254 | 0.77 | APLNR (0.45) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL1883949 | 0.75 | IDO1 (0.73) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL5998551 | 0.75 | APLNR (0.59) | APLNRCA12CA1CA2CA7 | |
| SCHEMBL3027061 | 0.75 | APLNR (0.59) | APLNRCA12CA1CA2CA7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2090932-B1 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORP (JP) | 2017-05-31 | — | — | EP | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |