SCHEMBL10138524

SCHEMBL10138524

CCC(C)c1cc(OC(C)=O)cc(OC(C)=O)c1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.44
ALDH1A1 P00352 2/20 0.44
LMNA P02545 4/20 0.42
KDM4E B2RXH2 2/20 0.42
TP53 P04637 2/20 0.42
CYP3A4 P08684 2/20 0.42
MAPT P10636 2/20 0.42
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
TTR P02766 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
CYP4F2 P78329 1/20 0.41
CYP4A11 Q02928 1/20 0.41
CYP19A1 P11511 2/20 0.39
ALOX5 P09917 2/20 0.38
GLA P06280 1/20 0.38
GAA P10253 1/20 0.38
MAPK1 P28482 1/20 0.38
CASP1 P29466 1/20 0.38
HTT P42858 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13317356 0.87 ELANE (0.44) TSHRALDH1A1MEN1KMT2AGAA
SCHEMBL13317352 0.84 ESR1 (0.53) TSHRALDH1A1KDM4EMEN1KMT2A
SCHEMBL1792446 0.83 CYP3A4 (0.53) TSHRALDH1A1LMNACYP3A4MEN1
SCHEMBL27657628 0.82 FFAR1 (0.43) TSHRALDH1A1LMNAKDM4ETP53
SCHEMBL111718 0.81 TSHR (0.60) TSHRALDH1A1LMNAKDM4ECYP3A4
SCHEMBL2758519 0.81 CYP4F2 (0.38) TSHRALDH1A1LMNAKDM4ETP53
SCHEMBL26085066 0.79 LMNA (0.40) TSHRALDH1A1LMNAKDM4ETP53
SCHEMBL25784445 0.79 CYP3A4 (0.43) TSHRALDH1A1LMNAKDM4ETP53
SCHEMBL1379951 0.79 LMNA (0.46) TSHRLMNAKDM4ETP53CYP3A4
SCHEMBL12363840 0.78 ABCB11 (0.50) TSHRALDH1A1LMNAKDM4ETP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8426103-B2 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090202946-A1 POSITIVE RESIST COMPOSITION FOR USE WITH ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-08-13 US disclosed