Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.54 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.51 |
| ▸ | LMNA | P02545 | 2/20 | 0.50 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.50 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.50 |
| ▸ | TP53 | P04637 | 1/20 | 0.50 |
| ▸ | MAPT | P10636 | 1/20 | 0.50 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.50 |
| ▸ | JUN | P05412 | 1/20 | 0.49 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.49 |
| ▸ | TNFSF11 | O14788 | 1/20 | 0.47 |
| ▸ | ACHE | P22303 | 2/20 | 0.47 |
| ▸ | VCP | P55072 | 1/20 | 0.45 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.44 |
| ▸ | PKM | P14618 | 2/20 | 0.44 |
| ▸ | NPC1 | O15118 | 1/20 | 0.44 |
| ▸ | RAB9A | P51151 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | CA1 | P00915 | 1/20 | 0.43 |
| ▸ | CA2 | P00918 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15944091 | 0.94 | LMNA (0.50) | TSHRPTGS1LMNANR3C1ALDH1A1 | |
| SCHEMBL25726179 | 0.92 | TSHR (0.50) | TSHRPTGS1LMNAALDH1A1HIF1A | |
| SCHEMBL15294615 | 0.88 | LMNA (0.53) | LMNAALDH1A1TP53MAPTALOX12 | |
| SCHEMBL24349245 | 0.85 | TSHR (0.58) | TSHRPTGS1NR3C1ALDH1A1JUN | |
| SCHEMBL11922869 | 0.84 | ALDH1A1 (0.49) | TSHRLMNAALDH1A1TP53MAPT | |
| SCHEMBL10148396 | 0.84 | ALDH1A1 (0.42) | TSHRLMNAALDH1A1TP53MAPT | |
| SCHEMBL13920787 | 0.84 | ALDH1A1 (0.47) | TSHRLMNAALDH1A1TP53MAPT | |
| SCHEMBL10148393 | 0.83 | ALDH1A1 (0.41) | TSHRLMNAALDH1A1TP53MAPT | |
| SCHEMBL8298141 | 0.83 | ALDH1A1 (0.60) | LMNAALDH1A1TP53MAPTALOX12 | |
| SCHEMBL9908607 | 0.83 | GAA (0.54) | TSHRLMNAALDH1A1TP53MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-7794916-B2 | Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-09-14 | — | — | US | disclosed |
| US-7718344-B2 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2010-05-18 | — | — | US | disclosed |
| US-7629107-B2 | Positive photosensitive composition, polymer compounds for use in the positive photosensitive composition, manufacturing method of the polymer compounds, compounds for use in the manufacture of the polymer compounds, and pattern-forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-12-08 | — | — | US | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20080187863-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080085464-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |