Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.37 |
| ▸ | MAPT | P10636 | 3/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.37 |
| ▸ | PLA2G1B | P04054 | 1/20 | 0.37 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.37 |
| ▸ | ATG4B | Q9Y4P1 | 1/20 | 0.37 |
| ▸ | NPC1 | O15118 | 2/20 | 0.37 |
| ▸ | RAB9A | P51151 | 2/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
| ▸ | CASP3 | P42574 | 1/20 | 0.37 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.37 |
| ▸ | MEN1 | O00255 | 3/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.36 |
| ▸ | USP2 | O75604 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
| ▸ | CXCR5 | P32302 | 1/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | GAA | P10253 | 2/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10182929 | 0.88 | TSHR (0.41) | ALDH1A1TDP1L3MBTL1KMT2AMEN1 | |
| SCHEMBL11999032 | 0.87 | NPSR1 (0.40) | ALDH1A1MAPTTDP1L3MBTL1NPC1 | |
| SCHEMBL10148362 | 0.87 | ALDH1A1 (0.45) | ALDH1A1TDP1NPC1RAB9AKMT2A | |
| SCHEMBL10148397 | 0.82 | TDP1 (0.37) | ALDH1A1MAPTTDP1PLA2G1BL3MBTL1 | |
| SCHEMBL13588091 | 0.82 | ALDH1A1 (0.37) | ALDH1A1MAPTTDP1KMT2AMEN1 | |
| SCHEMBL10148363 | 0.81 | ALDH1A1 (0.36) | ALDH1A1MAPTTDP1PLA2G1BL3MBTL1 | |
| SCHEMBL13018299 | 0.81 | ALDH1A1 (0.40) | ALDH1A1TDP1NPC1RAB9AKMT2A | |
| SCHEMBL17147973 | 0.80 | HDAC4 (0.42) | ALDH1A1MAPTPOLBKMT2AMEN1 | |
| SCHEMBL6721650 | 0.79 | HRH3 (0.40) | ALDH1A1PPARGPPARA | |
| SCHEMBL13879094 | 0.79 | ALDH1A1 (0.45) | ALDH1A1MAPTTDP1NPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-7794916-B2 | Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-09-14 | — | — | US | disclosed |
| US-7718344-B2 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2010-05-18 | — | — | US | disclosed |
| US-7629107-B2 | Positive photosensitive composition, polymer compounds for use in the positive photosensitive composition, manufacturing method of the polymer compounds, compounds for use in the manufacture of the polymer compounds, and pattern-forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-12-08 | — | — | US | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20080187863-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080085464-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |