SCHEMBL10148397

SCHEMBL10148397

CCC(C)c1ccc(OC(C)OCCOc2ccc(C(C)(C)C)cc2)c(C)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.37
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
ALDH1A1 P00352 6/20 0.37
KDM4E B2RXH2 4/20 0.36
KCNH2 Q12809 1/20 0.36
MAPT P10636 2/20 0.36
PLA2G1B P04054 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
ATG4B Q9Y4P1 1/20 0.36
USP2 O75604 1/20 0.35
HPGD P15428 1/20 0.35
CXCR5 P32302 1/20 0.35
TSHR P16473 1/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
VDR P11473 3/20 0.33
LMNA P02545 1/20 0.33
HTT P42858 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13588091 0.89 ALDH1A1 (0.37) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL10148363 0.88 ALDH1A1 (0.36) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL10182651 0.86 TDP1 (0.40) TDP1MEN1KMT2AALDH1A1KCNH2
SCHEMBL10148362 0.85 ALDH1A1 (0.45) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL10148451 0.82 ALDH1A1 (0.37) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL14924837 0.79 ALDH1A1 (0.54) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL13018299 0.79 ALDH1A1 (0.40) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL682188 0.78 KCNH2 (0.36) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL13879094 0.77 ALDH1A1 (0.45) TDP1MEN1KMT2AALDH1A1KDM4E
SCHEMBL10148379 0.76 ALDH1A1 (0.38) TDP1MEN1KMT2AALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7794916-B2 Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-09-14 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-7541131-B2 Resist composition, compound for use in the resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-06-02 US disclosed
US-20080187863-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed