SCHEMBL10148494

SCHEMBL10148494

CCOc1cc(C(C)CC)ccc1OC(C)OCCOc1ccc(C2CCCCC2)cc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.39
HTT P42858 2/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
ALDH1A1 P00352 4/20 0.38
KCNH2 Q12809 2/20 0.38
HRH3 Q9Y5N1 2/20 0.38
PPARG P37231 2/20 0.35
PPARA Q07869 1/20 0.35
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
TDP1 Q9NUW8 1/20 0.34
CYP2C9 P11712 1/20 0.34
MCHR1 Q99705 2/20 0.33
GAA P10253 1/20 0.33
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10088185 0.92 MCHR1 (0.41) LMNAALDH1A1KCNH2HRH3PPARG
SCHEMBL13359734 0.91 HTT (0.38) LMNAHTTSMN1; SMN2ALDH1A1KCNH2
SCHEMBL10148407 0.89 HRH3 (0.38) ALDH1A1KCNH2HRH3PPARGPPARA
SCHEMBL10088192 0.88 PPARG (0.38) LMNASMN1; SMN2ALDH1A1KCNH2HRH3
SCHEMBL111764 0.86 ALDH1A1 (0.46) ALDH1A1KCNH2HRH3MEN1KMT2A
SCHEMBL17147975 0.86 ALDH1A1 (0.40) LMNASMN1; SMN2ALDH1A1KCNH2HRH3
SCHEMBL683620 0.85 ALDH1A1 (0.47) LMNASMN1; SMN2ALDH1A1KCNH2HRH3
SCHEMBL10148496 0.84 MCHR1 (0.39) LMNASMN1; SMN2ALDH1A1KCNH2HRH3
SCHEMBL10088184 0.84 MCHR1 (0.41) LMNAALDH1A1KCNH2HRH3PPARG
SCHEMBL14219813 0.84 PPARG (0.36) LMNAHTTSMN1; SMN2ALDH1A1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed