SCHEMBL10148640

SCHEMBL10148640

CCC(C)(C)C(=O)OC(C)(O)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.34
MEN1 O00255 3/20 0.34
MAPK1 P28482 1/20 0.34
ALDH1A1 P00352 1/20 0.33
LMNA P02545 1/20 0.33
GLA P06280 1/20 0.33
EPHX2 P34913 2/20 0.32
CYP17A1 P05093 1/20 0.32
CYP19A1 P11511 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CNR2 P34972 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL47390 0.85 KMT2A (0.35) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL119887 0.84 KMT2A (0.34) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL2740754 0.84 KMT2A (0.34) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL19978612 0.81 KMT2A (0.33) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL18199028 0.80 EPHX2 (0.33) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL106979 0.80 MEN1 (0.32) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL18802878 0.80 MEN1 (0.33) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL19753662 0.80 MEN1 (0.33) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL2754854 0.79 ALDH1A1 (0.33) KMT2AMEN1MAPK1ALDH1A1LMNA
SCHEMBL14213223 0.79 MEN1 (0.35) KMT2AMEN1ALDH1A1LMNAEPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8987386-B2 Method of producing polymeric compound, resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-24 US disclosed
US-20120328993-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed