SCHEMBL10148935

SCHEMBL10148935

CC(=O)NS(=O)(=O)c1ccc(N)nc1

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 3/20 0.62
DHFR P00374 1/20 0.62
TSHR P16473 1/20 0.62
TDP1 Q9NUW8 1/20 0.62
KDM4E B2RXH2 2/20 0.56
MAP4K4 O95819 1/20 0.49
PKM P14618 2/20 0.49
BRAF P15056 1/20 0.46
HTT P42858 1/20 0.46
POLB P06746 1/20 0.45
ALDH1A1 P00352 2/20 0.43
TP53 P04637 1/20 0.42
HDAC1 Q13547 1/20 0.41
HDAC6 Q9UBN7 1/20 0.41
GCK P35557 1/20 0.41
GCKR Q14397 1/20 0.41
GABRP O00591 1/20 0.41
GABRD O14764 1/20 0.41
GABRA1 P14867 1/20 0.41
GABRB1 P18505 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15625448 0.80 EGFR (0.56) SMN1; SMN2DHFRTSHRTDP1KDM4E
SCHEMBL19332672 0.79 KDM4E (0.44) SMN1; SMN2DHFRTSHRTDP1KDM4E
SCHEMBL20914740 0.79 SMN1; SMN2 (0.51) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL28122264 0.77 SMN1; SMN2 (1.00) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL40863 0.77 SMN1; SMN2 (1.00) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL29207414 0.75 SMN1; SMN2 (0.96) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL2503539 0.75 SMN1; SMN2 (0.96) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL23317 0.75 SMN1; SMN2 (0.96) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL3912378 0.75 SMN1; SMN2 (0.96) SMN1; SMN2DHFRTSHRTDP1KDM4E
Sulfacetamide SCHEMBL16097762 0.75 SMN1; SMN2 (0.96) SMN1; SMN2DHFRTSHRTDP1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8785104-B2 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-22 US disclosed
US-8785104-B2 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-22 US disclosed
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20110014570-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110014570-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed