Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 1/20 | 0.44 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.39 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.39 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.39 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.39 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10158348 | 0.88 | — | — | |
| SCHEMBL5988542 | 0.80 | CYP1A2 (0.62) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL5105796 | 0.80 | CYP1A2 (0.62) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL18557965 | 0.80 | CYP1A2 (0.44) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL10158349 | 0.79 | — | — | |
| SCHEMBL8710704 | 0.78 | CYP1A2 (0.71) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL664978 | 0.77 | CYP1A2 (0.69) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL6344610 | 0.77 | CYP1A2 (0.42) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL6259231 | 0.77 | CYP1A2 (0.46) | CYP1A2CHRM5CHRM2CHRM4CHRM1 | |
| SCHEMBL6662416 | 0.77 | CYP1A2 (0.69) | CYP1A2CHRM5CHRM2CHRM4CHRM1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333468-A1 | RESIN COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, SUBSTRATE HAVING MULTILAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED FILM, METHOD FOR PRODUCING POLYMER, AND METHOD FOR PRODUCING RESIN COMPOSITION | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230333468-A1 | RESIN COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, SUBSTRATE HAVING MULTILAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED FILM, METHOD FOR PRODUCING POLYMER, AND METHOD FOR PRODUCING RESIN COMPOSITION | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230244145-A1 | SILICON-CONTAINING MONOMER MIXTURE, POLYSILOXANE, RESIN COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, PRODUCTION METHOD FOR CURED FILM, PATTERNED CURED FILM, AND PRODUCTION METHOD FOR PATTERNED CURED FILM | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230037301-A1 | NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN STRUCTURE AND METHOD FOR PRODUCING PATTERNED CURED FILM | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-02-09 | — | — | US | disclosed |
| US-20230039535-A1 | COMPOSITION, COMPOSITION PRECURSOR SOLUTION, PRODUCTION METHOD FOR COMPOSITION, SUBSTRATE WITH MULTILAYER FILM, AND PRODUCTION METHOD FOR PATTERNED SUBSTRATE | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-02-09 | — | — | US | disclosed |
| US-9902875-B2 | Composition for forming a coating type BPSG film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20100273110-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100147334-A1 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20100086878-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| US-20100086870-A1 | Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| US-20090136869-A1 | METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090011372-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | CYP1A2 2955/4885CHRM5 3421/4885CHRM2 2243/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | CYP1A2 2955/4885CHRM5 3421/4885CHRM2 2243/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.