SCHEMBL10158348

SCHEMBL10158348

O=C1CC(CC[SiH3])CO1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10158345 0.88 CYP1A2 (0.44)
SCHEMBL10158349 0.82
SCHEMBL2031953 0.80
SCHEMBL18263291 0.80
SCHEMBL12641503 0.80
SCHEMBL28363554 0.80
SCHEMBL18557972 0.78
SCHEMBL1332695 0.78
SCHEMBL9014214 0.78
SCHEMBL18557965 0.75 CYP1A2 (0.44)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914295-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20230333472-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-19 US disclosed
US-20230333468-A1 RESIN COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, SUBSTRATE HAVING MULTILAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED FILM, METHOD FOR PRODUCING POLYMER, AND METHOD FOR PRODUCING RESIN COMPOSITION CENTRAL GLASS COMPANY, LIMITED (JP) 2023-10-19 US disclosed
US-20230333468-A1 RESIN COMPOSITION, CURED FILM, METHOD FOR MANUFACTURING CURED FILM, SUBSTRATE HAVING MULTILAYER FILM, METHOD FOR PRODUCING PATTERNED SUBSTRATE, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED FILM, METHOD FOR PRODUCING POLYMER, AND METHOD FOR PRODUCING RESIN COMPOSITION CENTRAL GLASS COMPANY, LIMITED (JP) 2023-10-19 US disclosed
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230244145-A1 SILICON-CONTAINING MONOMER MIXTURE, POLYSILOXANE, RESIN COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, PRODUCTION METHOD FOR CURED FILM, PATTERNED CURED FILM, AND PRODUCTION METHOD FOR PATTERNED CURED FILM CENTRAL GLASS COMPANY, LIMITED (JP) 2023-08-03 US disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230037301-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN STRUCTURE AND METHOD FOR PRODUCING PATTERNED CURED FILM CENTRAL GLASS COMPANY, LIMITED (JP) 2023-02-09 US disclosed
US-20230039535-A1 COMPOSITION, COMPOSITION PRECURSOR SOLUTION, PRODUCTION METHOD FOR COMPOSITION, SUBSTRATE WITH MULTILAYER FILM, AND PRODUCTION METHOD FOR PATTERNED SUBSTRATE CENTRAL GLASS COMPANY, LIMITED (JP) 2023-02-09 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20100273110-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-10-28 US disclosed
US-20100147334-A1 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
US-20100086878-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed