SCHEMBL10163391

SCHEMBL10163391

CCC(C)(C)C(=O)OC1CCC(=O)O1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.35
CA9 Q16790 1/20 0.35
HMGCR P04035 4/20 0.35
CYP3A4 P08684 3/20 0.35
USP2 O75604 2/20 0.35
ALDH1A1 P00352 2/20 0.35
TSHR P16473 2/20 0.35
KDM4E B2RXH2 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
NR1I2 O75469 1/20 0.35
ABCB11 O95342 1/20 0.35
NR3C1 P04150 1/20 0.35
PGR P06401 1/20 0.35
ABCB1 P08183 1/20 0.35
ADORA3 P0DMS8 1/20 0.35
CYP2C8 P10632 1/20 0.35
CHRM1 P11229 1/20 0.35
ADRB3 P13945 1/20 0.35
GABRA1 P14867 1/20 0.35
ADRA2B P18089 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13609114 0.86 PRKCA (0.32) CA1CA9HMGCRCYP3A4USP2
SCHEMBL20820940 0.85 CA1 (0.33) CA1CA9CYP1A2PRKCA
SCHEMBL15177900 0.78 FKBP1A (0.33) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL12935470 0.76 HMGCR (0.32) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL12039497 0.76 SSTR4 (0.41) CHRM1GABRA1ADRA2BADRA2CHTR2A
SCHEMBL12935475 0.76 CYP3A4 (0.37) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL12963956 0.76 HMGCR (0.32) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL14902371 0.76 FKBP1A (0.34) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL9927433 0.76 FKBP1A (0.34) CA1CA9HMGCRCYP3A4USP2
SCHEMBL14883398 0.76 FKBP1A (0.34) HMGCRCYP3A4USP2ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 106 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11675270-B2 Resist underlayer film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2023-06-13 US disclosed
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 EP disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170199461-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20170199460-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20170184970-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170108777-A1 ADDITIVE AND RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-04-20 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20080268370-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-10-30 US disclosed
US-20080233521-A1 Method for manufacturing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-25 US disclosed
US-20080118860-A1 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-22 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080090173-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. 2008-04-17 US disclosed
US-20080090172-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-17 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 CA1 1665/4885CA9 2749/4885HMGCR 469/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.