SCHEMBL10167849

SCHEMBL10167849

CCC(C)(C)C(=O)OCCOC1CCCCO1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.42
KMT2A Q03164 1/20 0.42
KDM4C Q9H3R0 1/20 0.36
HMGCR P04035 2/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
ADORA3 P0DMS8 1/20 0.35
FKBP1A P62942 8/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CHRM2 P08172 1/20 0.31
CHRM4 P08173 1/20 0.31
CHRM1 P11229 1/20 0.31
CHRM3 P20309 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16282543 0.92 MEN1 (0.46) MEN1KMT2AKDM4CHMGCRNPC1
SCHEMBL16282540 0.84 HMGCR (0.38) MEN1KMT2AHMGCRFKBP1A
SCHEMBL9906817 0.84 MEN1 (0.39) MEN1KMT2AKDM4CNPC1RAB9A
SCHEMBL17424231 0.83 MEN1 (0.36) MEN1KMT2AHMGCRFKBP1A
SCHEMBL785892 0.80 FKBP1A (0.37) MEN1KMT2AHMGCRFKBP1A
SCHEMBL12263816 0.80 HMGCR (0.35) MEN1KMT2AHMGCRFKBP1A
SCHEMBL12199756 0.80 MEN1 (0.42) MEN1KMT2AKDM4CNPC1RAB9A
SCHEMBL29055398 0.80 MEN1 (0.49) MEN1KMT2AKDM4CNPC1RAB9A
SCHEMBL22070907 0.80 CYP4F2 (0.49) MEN1KMT2AKDM4CNPC1RAB9A
SCHEMBL16904228 0.79 EPHX1 (0.35) MEN1KMT2AHMGCRFKBP1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-20160327866-A1 PATTERN FORMING METHOD, TREATING AGENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE SAME FUJIFILM CORPORATION (JP) 2016-11-10 US disclosed
US-20160320700-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-11-03 US disclosed
US-9482947-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-11-01 US disclosed
US-9482958-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2016-11-01 US disclosed
US-9448477-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 US disclosed
US-9411230-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-08-09 US disclosed
US-20140045117-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-02-13 US disclosed
US-20130266777-A1 NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2013-10-10 US disclosed
US-20130157194-A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-20 US disclosed
US-20130157194-A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-20 US disclosed
US-20130113082-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-09 US disclosed
US-20130078426-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078434-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20120219913-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-08-30 US disclosed
US-20120052449-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-01 US disclosed
US-20120028196-A1 METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-02-02 US disclosed