Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PDK1 | Q15118 | 1/20 | 0.35 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.35 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.35 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.35 |
| ▸ | FKBP1A | P62942 | 3/20 | 0.35 |
| ▸ | HMGCR | P04035 | 1/20 | 0.32 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10171001 | 0.91 | FKBP1A (0.31) | PDK1PDK2PDK3PDK4FKBP1A | |
| SCHEMBL2682078 | 0.90 | PDK1 (0.35) | PDK1PDK2PDK3PDK4FKBP1A | |
| SCHEMBL9241612 | 0.88 | FKBP1A (0.33) | PDK1PDK2PDK3PDK4FKBP1A | |
| SCHEMBL800007 | 0.86 | FKBP1A (0.37) | FKBP1AHMGCR | |
| SCHEMBL12221437 | 0.86 | PDK1 (0.30) | PDK1PDK2PDK3PDK4 | |
| SCHEMBL13223870 | 0.82 | FKBP1A (0.40) | PDK1PDK2PDK3PDK4FKBP1A | |
| SCHEMBL13520510 | 0.82 | FKBP1A (0.34) | FKBP1AHMGCR | |
| SCHEMBL18025220 | 0.81 | PDK1 (0.35) | PDK1PDK2PDK3PDK4GAA | |
| SCHEMBL13520512 | 0.81 | HMGCR (0.34) | FKBP1AHMGCR | |
| SCHEMBL12221443 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20170269476-A1 | PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-09-21 | — | — | US | disclosed |
| US-20170115570-A1 | RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD AND POLYMER | JSR CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9488914-B2 | Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2016-11-08 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9423692-B2 | Composition for forming resist protection film for lithography and method for forming pattern of semiconductor device using the same | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-08-23 | — | — | US | disclosed |
| US-20120015301-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120009522-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20110318687-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110305979-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-12-15 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-7951524-B2 | Exposing photoresist polymer, photoacid generator and solvent to actinic radiation through a patterned photomask; development; immersion lithography; 1,1,1,3,3,3-hexafluoroisopropyl methacrylate-1-ethyl-cyclopentyl methacrylate copolymer; semiconductors | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-31 | — | — | US | disclosed |
| US-20100168337-A1 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-07-01 | — | — | US | disclosed |
| US-7678537-B2 | Graded topcoat materials for immersion lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-03-16 | — | — | US | disclosed |
| US-20080311506-A1 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY | ALLEN ROBERT D | 2008-12-18 | — | — | US | disclosed |
| US-20080311530-A1 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-12-18 | — | — | US | disclosed |