SCHEMBL10187195

SCHEMBL10187195

C=C(C)C(=O)OC(CCC(C)OC(C)=O)CC(C)C

nearest known ligand 0.41

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.41
CHRM2 P08172 1/20 0.37
CHRM4 P08173 1/20 0.37
CHRM1 P11229 1/20 0.37
TBXA2R P21731 1/20 0.37
GALR3 O60755 1/20 0.36
MAPT P10636 1/20 0.36
BLM P54132 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
ALDH1A1 P00352 1/20 0.31
CTSK P43235 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL92854 0.83 TSHR (0.43) TSHRALDH1A1CTSK
SCHEMBL31435672 0.82 TSHR (0.52) TSHRALDH1A1CTSK
SCHEMBL6669934 0.81 TSHR (0.44) TSHRALDH1A1CTSK
SCHEMBL17506168 0.81 TSHR (0.44) TSHRALDH1A1CTSK
SCHEMBL92855 0.81 TSHR (0.41) TSHRALDH1A1CTSK
SCHEMBL9909411 0.80 TSHR (0.45) TSHRMAPTSMN1; SMN2ALDH1A1
SCHEMBL8955602 0.79 TSHR (0.50) TSHRALDH1A1CTSK
SCHEMBL2540758 0.78 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL22230950 0.78 TSHR (0.47) TSHRALDH1A1CTSK
SCHEMBL23494300 0.77 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8211618-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-8105764-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20100227273-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-7449277-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL C., LTD (JP) 2008-11-11 US disclosed