⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9881068 | 1.00 | — | — | |
| SCHEMBL9925851 | 1.00 | — | — | |
| SCHEMBL13968149 | 0.76 | LMNA (0.43) | — | |
| Hydrochloric Acid SCHEMBL13834456 | 0.75 | LMNA (0.45) | — | |
| SCHEMBL20079560 | 0.75 | — | — | |
| SCHEMBL17570321 | 0.75 | — | — | |
| SCHEMBL13968182 | 0.75 | GRIN2D (0.47) | — | |
| SCHEMBL22399791 | 0.74 | EPHX2 (0.47) | — | |
| SCHEMBL6504730 | 0.73 | ALDH1A1 (0.33) | — | |
| SCHEMBL26063313 | 0.73 | PTPN1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8361703-B2 | Resist protective coating composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-29 | — | — | US | disclosed |
| US-8252504-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-8101335-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-8057981-B2 | Resist composition, resist protective coating composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |
| US-20100136486-A1 | RESIST PROTECTIVE COATING COMPOSITON AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100136482-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-7670750-B2 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-7592407-B2 | a perfluorinated ester compound containing a pyran ring, a hydroxy or protected hydroxy group; able to polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light; alkali development amenability, and dry etch resistance | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-22 | — | — | US | disclosed |
| US-7592407-B2 | a perfluorinated ester compound containing a pyran ring, a hydroxy or protected hydroxy group; able to polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light; alkali development amenability, and dry etch resistance | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-22 | — | — | US | disclosed |
| US-20090208867-A1 | Resist Composition, Resist Protective Coating Composition, and Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090208873-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-7378218-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-27 | — | — | US | disclosed |
| US-20080085466-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |