SCHEMBL10241242

SCHEMBL10241242

CC(C)(C)C1C2CC(CC(O)(C(F)(F)F)C(F)(F)F)C(C2)C1C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14613975 1.00 — —
SCHEMBL12465236 0.90 — —
SCHEMBL21168553 0.88 — —
SCHEMBL15219416 0.87 — —
SCHEMBL14460005 0.83 — —
SCHEMBL108134 0.76 — —
SCHEMBL16687971 0.76 — —
SCHEMBL17987836 0.75 — —
SCHEMBL10164053 0.74 — —
SCHEMBL15942905 0.74 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220121123-A1 METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-04-21 — — US disclosed
US-10996378-B2 Antireflective film, method of producing antireflective film, and eyeglass type display SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-04 — — US disclosed
US-10678132-B2 Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin FUJIFILM CORPORATION (JP) 2020-06-09 — — US disclosed
US-10578968-B2 Pattern forming method, resist pattern, and process for producing electronic device FUJIFILM CORPORATION (JP) 2020-03-03 — — US disclosed
US-20190196066-A1 ANTIREFLECTIVE FILM, METHOD OF PRODUCING ANTIREFLECTIVE FILM, AND EYEGLASS TYPE DISPLAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-27 — — US disclosed
US-10175578-B2 Pattern forming method, composition for forming protective film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2019-01-08 — — US disclosed
US-9709891-B2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2017-07-18 — — US disclosed
US-20170199461-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 — — US disclosed
US-20170199460-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 — — US disclosed
US-20170176862-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 — — US disclosed
EP-1736485-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2013-07-31 — — EP disclosed
US-20120116038-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN TAKESHITA MASARU (JP) 2012-05-10 — — US disclosed
US-7923199-B2 Using a sulfonium acid generator that forms a fluorine-substituted sulfonic acid compound; improved in the exposure latitude, pitch dependency and line edge roughness and enhanced in the sensitivity and resolution at the exposure with EUV light FUJIFILM CORPORATION (JP) 2011-04-12 — — US disclosed
US-7807328-B2 base resin comprises homo-/copolyenes having alkali soluble group, exhibits changed alkali solubility under action of acid, acid generator, and tertiary alkanolamines; for patterning semiconductor integrated circuit via lithography; improved resolution TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-05 — — US disclosed
EP-1811339-A1 Pattern forming method Fujifilm Corporation (JP) 2007-07-25 — — EP disclosed
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