SCHEMBL10248081

SCHEMBL10248081

CC(F)(F)C(=O)NCC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.58

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.58
TSHR P16473 1/20 0.58
HSD17B10 Q99714 1/20 0.57
EPHX2 P34913 7/20 0.54
HTT P42858 1/20 0.49
MAPT P10636 1/20 0.47
P2RX7 Q99572 4/20 0.46
L3MBTL1 Q9Y468 1/20 0.45
NPSR1 Q6W5P4 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6384681 0.86 ALDH1A1 (0.61) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL13701836 0.86 ALDH1A1 (0.61) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL11959257 0.85 ALDH1A1 (0.46) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL17929910 0.81 ALDH1A1 (0.56) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL10248355 0.81 ALDH1A1 (0.51) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL14552719 0.80 ALDH1A1 (0.54) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL14950072 0.79 ALDH1A1 (0.53) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL2634441 0.79 ALDH1A1 (0.53) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL17586272 0.78 ALDH1A1 (0.50) ALDH1A1TSHRHSD17B10EPHX2HTT
SCHEMBL10284324 0.78 ALDH1A1 (0.51) ALDH1A1TSHRHSD17B10EPHX2HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170146908-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-05-25 US disclosed
US-20170038685-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-02-09 US disclosed
US-20160347897-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-12-01 US disclosed
US-20160223905-A1 ACTIVE LIGHTRAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2016-08-04 US disclosed
US-20160209749-A1 PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-8956802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-02-17 US disclosed
US-8859192-B2 Negative pattern forming method and resist pattern FUJIFILM CORPORATION (JP) 2014-10-14 US disclosed
US-20140212814-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN USING THE COMPOSITION, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-31 US disclosed
US-8647812-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-02-11 US disclosed
US-20130266777-A1 NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2013-10-10 US disclosed
US-20130202999-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-08-08 US disclosed
US-20130011619-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
WO-2012133257-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2012-10-04 WO disclosed
WO-2012043866-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-04-05 WO disclosed
US-20120076996-A1 RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed
WO-2012036315-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-22 WO disclosed