SCHEMBL10259463

SCHEMBL10259463

CCOCOC12CC3CC(C1)CC(OC(=O)C(C)CC)(C3)C2

nearest known ligand 0.36

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 3/20 0.34
ALDH1A1 P00352 1/20 0.34
DPP4 P27487 2/20 0.33
DPP8 Q6V1X1 4/20 0.33
DPP9 Q86TI2 4/20 0.33
CYP17A1 P05093 1/20 0.33
CYP19A1 P11511 1/20 0.33
KMT2A Q03164 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15043153 0.88 CYP17A1 (0.33) ALDH1A1CYP17A1CYP19A1KMT2ASMN1; SMN2
SCHEMBL12309610 0.88 DPP8 (0.31) DPP8DPP9CYP17A1CYP19A1
SCHEMBL17773368 0.84 ALDH1A1 (0.34) ALDH1A1CYP17A1CYP19A1KMT2ASMN1; SMN2
SCHEMBL10224665 0.84 DPP8 (0.33) ALDH1A1DPP8DPP9CYP17A1CYP19A1
SCHEMBL15268375 0.83 CYP17A1 (0.35) ALDH1A1DPP4CYP17A1CYP19A1KMT2A
SCHEMBL10259092 0.83 CYP17A1 (0.31) CYP17A1CYP19A1
SCHEMBL17853812 0.82 CYP17A1 (0.34) ALDH1A1DPP4CYP17A1CYP19A1KMT2A
SCHEMBL14226581 0.82 CYP17A1 (0.32) ALDH1A1CYP17A1CYP19A1
SCHEMBL10259712 0.82 DPP4 (0.31) DPP4CYP17A1CYP19A1
SCHEMBL10224664 0.81 CYP17A1 (0.31) CYP17A1CYP19A1KMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9057949-B2 Patterning process, resist composition, polymer, and polymerizable ester compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-16 US disclosed
US-9057948-B2 Resist composition for EUV or EB, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-16 US disclosed
US-20130157194-A1 PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-20 US disclosed
US-20130143159-A1 RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-06 US disclosed
US-8377625-B2 Method for producing a copolymer solution with a uniform concentration for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-02-19 US disclosed
US-8211615-B2 Copolymer for immersion lithography and compositions MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-7960494-B2 Copolymer for semiconductor lithography and process for producing the same MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-06-14 US disclosed
US-20100143842-A1 METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed
US-20100047710-A1 COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-02-25 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed