SCHEMBL3482487

SCHEMBL3482487

CCCC[SiH](C)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8139609 0.90 TSHR (0.40)
SCHEMBL27249005 0.90 TSHR (0.40)
SCHEMBL27585951 0.90 TSHR (0.40)
SCHEMBL12898516 0.88
SCHEMBL2769579 0.82
SCHEMBL10308294 0.82
SCHEMBL20134677 0.81 ADRB2 (0.38)
SCHEMBL3482206 0.81 ADRB2 (0.32)
Ammonia Solution, Strong SCHEMBL28118142 0.80
Water SCHEMBL28106022 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4018015-A1 MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM Versum Materials US, LLC (US) 2022-06-29 EP claimed
CN-114556527-A Monoalkoxysilanes and dialkoxysilanes and dense organosilica films prepared therefrom 弗萨姆材料美国有限责任公司 2022-05-27 CN claimed
WO-2021050798-A1 MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM VERSUM MATERIALS US, LLC (US) 2021-03-18 WO claimed
EP-3315319-B1 TIRE WITH REDUCED CAVITY NOISE HANKOOK TIRE CO LTD (KR) 2020-06-24 EP claimed
CN-107972418-A Cavity Noise reduction tire 韩国轮胎株式会社 2018-05-01 CN claimed
CN-108068561-A Cavity Noise reduction tire 韩国轮胎株式会社 2018-05-25 CN disclosed
CN-107972418-A Cavity Noise reduction tire 韩国轮胎株式会社 2018-05-01 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-1102600-C Propylene-ethylene random copolymer, process for producing the same and film thereof SUMITOMO CHEMICAL CO (JP) 2003-03-05 CN disclosed
CN-1159454-A Propylene-ethylene random copolymer, process for producing the same and film thereof SUMITOMO CHEMICAL CO (JP) 1997-09-17 CN disclosed