⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12898507 | 0.88 | — | — | |
| SCHEMBL10308289 | 0.83 | — | — | |
| SCHEMBL9121658 | 0.80 | — | — | |
| SCHEMBL12898584 | 0.80 | — | — | |
| SCHEMBL13089517 | 0.79 | — | — | |
| SCHEMBL13089430 | 0.79 | — | — | |
| SCHEMBL10308288 | 0.77 | — | — | |
| SCHEMBL12898511 | 0.75 | — | — | |
| SCHEMBL10308294 | 0.72 | — | — | |
| SCHEMBL135560 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9224593-B2 | Method of manufacturing a semiconductor device having a porous, low-k dielectric layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-12-29 | — | — | US | disclosed |
| US-9224593-B2 | Method of manufacturing a semiconductor device having a porous, low-k dielectric layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-12-29 | — | — | US | disclosed |
| US-20120178253-A1 | Method of Manufacturing a Semiconductor Device Having a Porous, Low-K Dielectric Layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-07-12 | — | — | US | disclosed |