⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2681158 | 0.89 | ABHD6 (0.32) | — | |
| SCHEMBL2608005 | 0.84 | — | — | |
| SCHEMBL824351 | 0.80 | — | — | |
| SCHEMBL824300 | 0.80 | — | — | |
| SCHEMBL824355 | 0.79 | — | — | |
| SCHEMBL26009266 | 0.79 | — | — | |
| SCHEMBL14977987 | 0.78 | — | — | |
| SCHEMBL15080716 | 0.78 | — | — | |
| SCHEMBL10261039 | 0.77 | PRKCA (0.32) | — | |
| SCHEMBL19135829 | 0.77 | PRKCA (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8367297-B2 | Resist composition, method of forming resist pattern, novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-05 | — | — | US | disclosed |
| US-8338075-B2 | Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-8329378-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-11 | — | — | US | disclosed |
| US-8323869-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-04 | — | — | US | disclosed |
| US-8221956-B2 | Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-17 | — | — | US | disclosed |
| US-20100233626-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100196820-A1 | Resist composition, method of forming resist pattern, novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-05 | — | — | US | disclosed |
| US-20090317743-A1 | Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. | 2009-12-24 | — | — | US | disclosed |