⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3241439 | 1.00 | — | — | |
| SCHEMBL1413199 | 1.00 | — | — | |
| SCHEMBL3241848 | 1.00 | — | — | |
| SCHEMBL559813 | 0.97 | — | — | |
| SCHEMBL70257 | 0.97 | — | — | |
| SCHEMBL21461252 | 0.92 | ALDH1A1 (0.41) | — | |
| SCHEMBL25451 | 0.92 | ALDH1A1 (0.41) | — | |
| SCHEMBL5049192 | 0.92 | ALDH1A1 (0.41) | — | |
| SCHEMBL29101792 | 0.92 | ALDH1A1 (0.41) | — | |
| SCHEMBL18529 | 0.89 | ALDH1A1 (0.37) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 86 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7667230-B2 | Electronic devices containing acene-thiophene copolymers | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2010-02-23 | — | — | US | claimed |
| US-7608679-B2 | for use in semiconductors, electronics such as organic thin film transistors, light emitting diodes, and photovoltaic cells | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2009-10-27 | — | — | US | claimed |
| EP-2001926-A2 | ACENE-THIOPHENE COPOLYMERS | 3M Innovative Properties Company (US) | 2008-12-17 | — | — | EP | claimed |
| WO-2007115021-A2 | ACENE-THIOPHENE COPOLYMERS | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2007-10-11 | — | — | WO | claimed |
| US-20070232781-A1 | ACENE-THIOPHENE COPOLYMERS | 3M INNOVATIVE PROPERTIES COMPANY | 2007-10-04 | — | — | US | claimed |
| US-7276395-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2007-10-02 | — | — | US | claimed |
| US-20060033086-A1 | Depositing a gate electrode material on the substrate;depositing a gate dielectric on the gate electrode material;depositing an organic semiconductor layer comprising acene-thiophene compounds, providing a source electrode and a drain electrode contiguous to the organic semiconductor layer | GERLACH CHRISTOPHER P | 2006-02-16 | — | — | US | claimed |
| US-6998068-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2006-02-14 | — | — | US | claimed |
| US-20230333469-A1 | FILM FORMING COMPOSITION FOR LITHOGRAPHY, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-10-19 | — | — | US | disclosed |
| EP-3950334-B1 | RESIN COMPOSITION, RESIN SHEET, MULTILAYER PRINTED WIRING BOARD, AND SEMICONDUCTOR DEVICE | MITSUBISHI GAS CHEMICAL CO (JP) | 2023-08-16 | — | — | EP | disclosed |
| US-20220204810-A1 | RESIN COMPOSITION, RESIN SHEET, MULTILAYER PRINTED WIRING BOARD, AND SEMICONDUCTOR DEVICE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-06-30 | — | — | US | disclosed |
| EP-3950334-A1 | RESIN COMPOSITION, RESIN SHEET, MULTILAYER PRINTED WIRING BOARD, AND SEMICONDUCTOR DEVICE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-09 | — | — | EP | disclosed |
| EP-2832761-B1 | POLYMER COMPOUND AND LIGHT EMITTING ELEMENT USING SAME | SUMITOMO CHEMICAL CO (JP) | 2020-11-18 | — | — | EP | disclosed |
| EP-2530759-B1 | LIGHT-EMITTING MATERIAL, INK COMPOSITION, THIN FILM, LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING A LIGHT-EMITTING ELEMENT | SUMITOMO CHEMICAL CO (JP) | 2018-10-17 | — | — | EP | disclosed |
| US-7276395-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2007-10-02 | — | — | US | disclosed |
| EP-1654248-A1 | ACENE-THIOPHENE SEMICONDUCTORS | 3M Innovative Properties Company (US) | 2006-05-10 | — | — | EP | disclosed |
| US-20060033086-A1 | Depositing a gate electrode material on the substrate;depositing a gate dielectric on the gate electrode material;depositing an organic semiconductor layer comprising acene-thiophene compounds, providing a source electrode and a drain electrode contiguous to the organic semiconductor layer | GERLACH CHRISTOPHER P | 2006-02-16 | — | — | US | disclosed |
| US-6998068-B2 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2006-02-14 | — | — | US | disclosed |
| WO-2005019198-A1 | ACENE-THIOPHENE SEMICONDUCTORS | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2005-03-03 | — | — | WO | disclosed |
| US-20050035333-A1 | Acene-thiophene semiconductors | 3M INNOVATIVE PROPERTIES COMPANY | 2005-02-17 | — | — | US | disclosed |