SCHEMBL1058181

SCHEMBL1058181

O=C(OCc1c([N+](=O)[O-])cccc1[N+](=O)[O-])N1CCCCC1

nearest known ligand 0.50

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
GPR174 Q9BXC1 1/20 0.47
KDM4E B2RXH2 2/20 0.47
ALDH1A1 P00352 5/20 0.47
HPGD P15428 2/20 0.46
KMT2A Q03164 2/20 0.46
MEN1 O00255 1/20 0.46
LMNA P02545 1/20 0.46
MAPT P10636 3/20 0.44
GAA P10253 1/20 0.44
RAB9A P51151 2/20 0.43
SMN1; SMN2 Q16637 2/20 0.43
NPC1 O15118 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1055547 0.93 KDM4E (0.53) GPR174KDM4EALDH1A1KMT2AMEN1
SCHEMBL30728601 0.86 KDM4E (0.46) GPR174KDM4EALDH1A1KMT2AMEN1
SCHEMBL1055253 0.85 KDM4E (0.49) GPR174KDM4EALDH1A1HPGDKMT2A
SCHEMBL729505 0.83 KDM4E (0.50) GPR174KDM4EALDH1A1HPGDKMT2A
SCHEMBL13327253 0.82 HTT (0.44) GPR174KDM4EALDH1A1KMT2AMEN1
SCHEMBL10508064 0.81 KDM4E (0.50) KDM4EALDH1A1HPGDKMT2AMEN1
SCHEMBL12281700 0.80 KDM4E (0.48) GPR174KDM4EALDH1A1KMT2AMEN1
SCHEMBL1056588 0.77 KDM4E (0.55) KDM4EALDH1A1KMT2AMEN1LMNA
SCHEMBL15096895 0.75 KDM4E (0.39) KDM4EALDH1A1HPGDKMT2AMEN1
Hydrochloric Acid SCHEMBL27949581 0.75 LMNA (0.53) ALDH1A1HPGDKMT2AMEN1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025034474-A1 3D PRINTED POROUS SUPRAMOLECULAR SORBENTS BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) 2025-02-13 WO disclosed
US-20240199854-A1 COMPOSITION, CURED FILM, STRUCTURAL BODY, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD OF CURED FILM FUJIFLIM CORPORATION (JP) 2024-06-20 US disclosed
WO-2024057999-A1 COLORING COMPOSITION, CURED FILM, COLOR FILTER, DISPLAY DEVICE AND METHOD FOR PRODUCING CURED FILM 富士フイルム株式会社 2024-03-21 WO disclosed
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 US disclosed
WO-2023032746-A1 COMPOSITION, CURED FILM, STRUCTURE, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND METHOD FOR PRODUCING CURED FILM 富士フイルム株式会社 2023-03-09 WO disclosed
CN-110095941-B Photosensitive resin composition and method for producing semiconductor element 东丽株式会社 2023-02-17 CN disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 WO disclosed
CN-107077070-B Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device 东丽株式会社 2020-06-16 CN disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 US disclosed
US-20130126860-A1 THIN FILM TRANSISTOR SUBSTRATE DAI NIPPON PRINTING CO., LTD. (JP) 2013-05-23 US disclosed
US-20130126860-A1 THIN FILM TRANSISTOR SUBSTRATE DAI NIPPON PRINTING CO., LTD. (JP) 2013-05-23 US disclosed
WO-2011126076-A1 THIN-FILM TRANSISTOR SUBSTRATE 大日本印刷株式会社 (JP) 2011-10-13 WO disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 EP disclosed
US-6815142-B1 Method for forming resist pattern, and overlying layer material and semiconductor device used for forming resist pattern RENESAS TECHNOLOGY CORP. (JP) 2004-11-09 US disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed