SCHEMBL106552

SCHEMBL106552

CC(C)(C)C(=O)C[S+]1CCCC1

nearest known ligand 0.30

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30
POLB P06746 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bromide SCHEMBL2112043 0.98 KMT2A (0.32)
SCHEMBL686053 0.98
Trifluoromethanesulfonic Acid SCHEMBL6550389 0.84
Trifluoromethanesulfonic Acid SCHEMBL6550356 0.82
SCHEMBL685328 0.80
SCHEMBL6727632 0.80
SCHEMBL6550669 0.79 EPHX2 (0.33)
SCHEMBL6727978 0.79 ALDH1A1 (0.30) ALDH1A1POLB
SCHEMBL6550781 0.78 EPHX2 (0.32)
SCHEMBL6548789 0.76 ALDH1A1 (0.42) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1059 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-20230161249-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2023-05-25 US disclosed
US-11656548-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-23 US disclosed
US-11656548-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-23 US disclosed
US-11579528-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-02-14 US disclosed
US-20220206386-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-06-30 US disclosed
US-11181820-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-11-23 US disclosed
EP-2666057-B1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE COMPOSITION, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, PHOTOMASK AND POLYMER COMPOUND FUJIFILM CORP (JP) 2021-07-28 EP disclosed
US-20210040370-A1 THERMAL CONDUCTIVE LAYER, PHOTOSENSITIVE LAYER, PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD FOR THERMAL CONDUCTIVE LAYER, AND LAMINATE AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2021-02-11 US disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed
US-20050048395-A1 Novel sulfonyldiazomethane compounds, photoacid generator, resist materials and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-03-03 US disclosed
US-20040224251-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-11-11 US disclosed
US-6767686-B2 FOR USE IN LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-07-27 US disclosed
US-6713612-B2 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-30 US disclosed
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
EP-1349007-A1 Photosensitive Paste SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-10-01 EP disclosed
US-20020146641-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-10-10 US disclosed
EP-1207423-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-05-22 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process VEGFA, DNMT3A, PIM3 ALDH1A1 3469/4885POLB 234/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.