SCHEMBL107173

SCHEMBL107173

CCCCCCCC[S+](CCCCCCCC)CC(=O)c1ccccc1

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES1 P23141 4/20 0.50
CES2 O00748 3/20 0.50
NAAA Q02083 1/20 0.49
L3MBTL1 Q9Y468 2/20 0.47
MAPT P10636 2/20 0.47
TDP1 Q9NUW8 2/20 0.47
LMNA P02545 2/20 0.47
HSD17B3 P37058 5/20 0.44
HDAC3 O15379 1/20 0.43
HDAC4 P56524 1/20 0.43
HDAC1 Q13547 1/20 0.43
HDAC7 Q8WUI4 1/20 0.43
HDAC2 Q92769 1/20 0.43
HDAC10 Q969S8 1/20 0.43
HDAC11 Q96DB2 1/20 0.43
HDAC8 Q9BY41 1/20 0.43
HDAC6 Q9UBN7 1/20 0.43
HDAC9 Q9UKV0 1/20 0.43
HDAC5 Q9UQL6 1/20 0.43
KDM4E B2RXH2 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL106336 1.00 CES1 (0.50) CES1CES2NAAAL3MBTL1MAPT
Bromide SCHEMBL8757443 0.98 CES1 (0.49) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL3394492 0.98 CES1 (0.49) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL106555 0.93 CES1 (0.47) CES1CES2NAAAL3MBTL1MAPT
Bromide SCHEMBL9716135 0.92 CES1 (0.46) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL8757328 0.88 CES2 (0.40) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL4579630 0.87 CES1 (0.42) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL1127720 0.85 CES1 (0.49) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL1598481 0.85 CES1 (0.49) CES1CES2NAAAL3MBTL1MAPT
SCHEMBL3440454 0.85 CES1 (0.49) CES1CES2NAAAL3MBTL1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 371 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20190204736-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-07-04 US disclosed
US-9904167-B2 Compound, active light sensitive or radiation sensitive resin composition, resist film using same, resist-coated mask blank, photomask, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-02-27 US disclosed
US-9904167-B2 Compound, active light sensitive or radiation sensitive resin composition, resist film using same, resist-coated mask blank, photomask, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-02-27 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-20180017865-A1 PATTERN FORMING METHOD, PHOTO MASK MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-01-18 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 US disclosed
US-20070072118-A1 Positive photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-20070065753-A1 Positive resist composition for immersion exposure and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
US-7192685-B2 Positive resist composition and method of forming resist pattern using the same. FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070052790-A1 Ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070049651-A1 Curable composition, ink composition, inkjet recording method, printed material, method of producing planographic printing plate, planographic printing plate, and oxcetane compound FUJI PHOTO FILM CO., LTD. 2007-03-01 US disclosed
US-20070039517-A1 Ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME POLR2H, POLQ, RXRA CES1 4210/4885CES2 2873/4885NAAA 1959/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.