SCHEMBL107265

SCHEMBL107265

O=S(=O)(NS(=O)(=O)C(F)(F)C(F)(F)CF)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
EPHX1 P07099 1/20 0.31
PTPN1 P18031 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12256492 0.82 CA1 (0.32) CA1CA2
SCHEMBL2230410 0.80 CA1 (0.31) CA1CA2
SCHEMBL2231399 0.80 CA1 (0.31) CA1CA2
SCHEMBL107195 0.80
SCHEMBL2229445 0.80 CA1 (0.31) CA1CA2
SCHEMBL2232849 0.78 CA2 (0.46) CA1CA2EPHX1PTPN1
SCHEMBL4457449 0.77 CA2 (0.56) CA1CA2EPHX1PTPN1
SCHEMBL37874 0.77 CA2 (0.56) CA1CA2EPHX1PTPN1
SCHEMBL10233776 0.76 CA2 (0.40) CA1CA2EPHX1PTPN1
SCHEMBL2230692 0.75 CA2 (0.43) CA1CA2EPHX1PTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160313645-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-10-27 US disclosed
US-9116437-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-08-25 US disclosed
US-9046773-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound FUJIFILM CORPORATION (JP) 2015-06-02 US disclosed
US-9017917-B2 Resist composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2015-04-28 US disclosed
US-8936674-B2 Conductive silica sol composition, and molded article produced using the same MITSUBISHI MATERIALS CORPORATION (JP) 2015-01-20 US disclosed
US-8450041-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-8426101-B2 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2013-04-23 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8148044-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-03 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed
US-20090280440-A1 SURFACE TREATING AGENT FOR RESIST-PATTERN, AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2009-11-12 US disclosed
US-20090246695-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE SAME, POLYMERIZABLE COMPOUND AND POLYMER COMPOUND OBTAINED BY POLYMERIZING THE POLYMERIZABLE COMPOUND FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090087776-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20090017400-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-15 US disclosed
US-20080292989-A1 POSITIVE WORKING PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-11-27 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20070141512-A1 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-21 US disclosed