⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12003675 | 0.91 | — | — | |
| SCHEMBL18097 | 0.89 | — | — | |
| SCHEMBL29273 | 0.89 | — | — | |
| SCHEMBL17159974 | 0.89 | — | — | |
| SCHEMBL8709356 | 0.89 | — | — | |
| SCHEMBL3619033 | 0.89 | — | — | |
| SCHEMBL258636 | 0.89 | — | — | |
| Zinc Ion SCHEMBL504004 | 0.80 | — | — | |
| SCHEMBL107610 | 0.80 | — | — | |
| Ammonia Solution, Strong SCHEMBL17684981 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20190252571-A1 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2019-08-15 | — | — | US | claimed |
| US-20170352536-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2017-12-07 | — | — | US | claimed |
| EP-3238229-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | Integrated Solar (NO) | 2017-11-01 | — | — | EP | claimed |
| US-20030122130-A1 | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate having a mechanical decoupling layer | MOTOROLA, INC. (US) | 2003-07-03 | — | — | US | claimed |
| US-20190252571-A1 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2019-08-15 | — | — | US | disclosed |
| US-20170352536-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2017-12-07 | — | — | US | disclosed |
| EP-3238229-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | Integrated Solar (NO) | 2017-11-01 | — | — | EP | disclosed |
| US-8994049-B2 | Light emitting component and manufacturing method thereof | INTERLIGHT OPTOTECH CORPORATION (TW) | 2015-03-31 | — | — | US | disclosed |
| US-20120068210-A1 | LIGHT EMITTING COMPONENT AND MANUFACTURING METHOD THEREOF | INTEMATIX TECHNOLOGY CENTER CORPORATION (TW) | 2012-03-22 | — | — | US | disclosed |