SCHEMBL107666

SCHEMBL107666

CCC(C)(C)C(=O)OCCC[Si](C)(C)C

nearest known ligand 0.36

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 1/20 0.36
CYP4A11 Q02928 1/20 0.36
ALOX15 P16050 1/20 0.35
ALDH1A1 P00352 1/20 0.32
FKBP1A P62942 1/20 0.32
ACHE P22303 6/20 0.31
ATM Q13315 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16022358 0.93 CYP4F2 (0.38) CYP4F2CYP4A11ACHE
SCHEMBL17577434 0.93 CYP4F2 (0.38) CYP4F2CYP4A11ACHE
SCHEMBL107821 0.89 CYP4F2 (0.34) CYP4F2CYP4A11
SCHEMBL18014664 0.87 CYP4F2 (0.35) CYP4F2CYP4A11ALDH1A1FKBP1AACHE
SCHEMBL18014657 0.87 CYP4F2 (0.35) CYP4F2CYP4A11ALDH1A1FKBP1AACHE
SCHEMBL14010859 0.86 ALOX15 (0.32) ALOX15
SCHEMBL14946404 0.86 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL20276245 0.86 CYP4F2 (0.34) CYP4F2CYP4A11ALDH1A1FKBP1A
SCHEMBL15521619 0.85 ALOX15 (0.35) ALOX15ALDH1A1ACHEATM
SCHEMBL47561 0.85 CYP4F2 (0.36) CYP4F2CYP4A11ALDH1A1FKBP1AACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 436 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-20180175299-A1 ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM FUJIFILM CORPORATION (JP) 2018-06-21 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-20180087010-A1 PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-03-29 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-20180011406-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-01-11 US disclosed
US-20170351176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-20170351179-A1 COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-20080171287-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-07-17 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20080081290-A1 RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1903394-A1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM Corporation (JP) 2008-03-26 EP disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
US-20070172768-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 US disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed