Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | HPGD | P15428 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9608717 | 0.91 | ALDH1A1 (0.33) | ALDH1A1LMNAHPGDSMN1; SMN2EPHX2 | |
| SCHEMBL18938119 | 0.88 | ALDH1A1 (0.34) | ALDH1A1LMNAHPGDSMN1; SMN2 | |
| SCHEMBL17598854 | 0.88 | ALDH1A1 (0.32) | ALDH1A1LMNAHPGDSMN1; SMN2 | |
| SCHEMBL19464435 | 0.83 | LMNA (0.32) | ALDH1A1LMNAHPGDSMN1; SMN2 | |
| SCHEMBL10049069 | 0.83 | ALDH1A1 (0.30) | ALDH1A1 | |
| SCHEMBL10049071 | 0.82 | ALDH1A1 (0.37) | ALDH1A1LMNAHPGDSMN1; SMN2EPHX2 | |
| SCHEMBL15116340 | 0.82 | ALDH1A1 (0.35) | ALDH1A1LMNAHPGDSMN1; SMN2EPHX2 | |
| SCHEMBL13288260 | 0.82 | LMNA (0.33) | ALDH1A1LMNAHPGDSMN1; SMN2 | |
| SCHEMBL12309109 | 0.81 | — | — | |
| SCHEMBL15113932 | 0.81 | ALDH1A1 (0.34) | ALDH1A1LMNAHPGDSMN1; SMN2EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2414896-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2020-11-11 | — | — | EP | disclosed |
| US-10031419-B2 | Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device | FUJIFILM CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-20180120705-A1 | PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9929376-B2 | Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor | FUJIFILM CORPORATION (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9904168-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-9880472-B2 | Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same | FUJIFILM CORPORATION (JP) | 2018-01-30 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-20100204422-A1 | Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern | CENTRAL GLASS COMPANY, LIMITED (JP) | 2010-08-12 | — | — | US | disclosed |
| US-7771914-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-10 | — | — | US | disclosed |
| US-7736835-B2 | Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern | CENTRAL GLASS COMPANY, LIMITED (JP) | 2010-06-15 | — | — | US | disclosed |
| US-20090325103-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-20090053650-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20090042132-A1 | RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7402626-B2 | Top coat composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-07-22 | — | — | US | disclosed |
| US-20080090172-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20080003517-A1 | Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-01-03 | — | — | US | disclosed |
| US-20070254235-A1 | SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-11-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100204422-A1 | Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern | AFF1, AFF2, FGFR1 | ALDH1A1 903/4885LMNA 3016/4885HPGD 4336/4885 |
| US-20080003517-A1 | Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern | AFF1, AFF2, FGFR1 | ALDH1A1 903/4885LMNA 3016/4885HPGD 4336/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.