SCHEMBL108249

SCHEMBL108249

CCC(C)(C)C(=O)OC[Si](C)(C)C

nearest known ligand 0.36

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 1/20 0.36
CYP4A11 Q02928 1/20 0.36
HMGCR P04035 1/20 0.31
RIPK1 Q13546 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18014650 0.87 CYP4F2 (0.36) CYP4F2CYP4A11HMGCR
SCHEMBL18014655 0.85 CYP4F2 (0.35) CYP4F2CYP4A11HMGCR
SCHEMBL18014639 0.83 CYP4F2 (0.34) CYP4F2CYP4A11HMGCR
SCHEMBL18014652 0.83 CYP4F2 (0.36) CYP4F2CYP4A11HMGCR
SCHEMBL18014640 0.82 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL13901477 0.80 CYP4F2 (0.33) CYP4F2CYP4A11HMGCR
SCHEMBL18014646 0.80 CYP4F2 (0.36) CYP4F2CYP4A11
SCHEMBL13764137 0.80 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL18014645 0.80 CYP4F2 (0.36) CYP4F2CYP4A11
SCHEMBL28205699 0.79 PRKCA (0.41) CYP4F2CYP4A11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 365 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-20180175299-A1 ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM FUJIFILM CORPORATION (JP) 2018-06-21 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-20180011406-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-01-11 US disclosed
US-20170351176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-20170351179-A1 COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-9834700-B2 Polylactide/silicon-containing block copolymers for nanolithography BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) 2017-12-05 US disclosed
US-9799832-B2 Organic thin-film transistor and method for manufacturing same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-20170283587-A1 CURABLE COMPOSITION, INFRARED CUT FILTER WITH LIGHT-SHIELDING FILM, AND SOLID-STATE IMAGING DEVICE FUJIFILM CORPORATION (JP) 2017-10-05 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080206669-A1 POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed
US-20080187860-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080171287-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-07-17 US disclosed
US-7368220-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-05-06 US disclosed
US-20080081290-A1 RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
US-20070172768-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
US-20070148589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed