SCHEMBL1089974

SCHEMBL1089974

COCc1cc(C(C)(C)c2ccc(C(C)(c3cc(COC)c(O)c(COC)c3)c3cc(COC)c(O)c(COC)c3)cc2)cc(COC)c1O

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALOX15 P16050 3/20 0.45
MAPK1 P28482 1/20 0.45
HTT P42858 1/20 0.45
ESR1 P03372 6/20 0.42
ESR2 Q92731 5/20 0.42
HPGD P15428 4/20 0.42
TSHR P16473 4/20 0.42
CYP3A4 P08684 3/20 0.42
HSD17B10 Q99714 2/20 0.42
AR P10275 1/20 0.42
SLC6A2 P23975 1/20 0.42
SLC6A4 P31645 1/20 0.42
HTR6 P50406 1/20 0.42
ESRRG P62508 1/20 0.42
SLC6A3 Q01959 1/20 0.42
KLF10 Q13118 1/20 0.41
ALDH1A1 P00352 4/20 0.39
PRKCE Q02156 3/20 0.39
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18218028 0.95 ALOX15 (0.41) ALOX15MAPK1HTTESR1ESR2
SCHEMBL17356550 0.94 ALOX15 (0.41) ALOX15MAPK1HTTESR1ESR2
SCHEMBL16073098 0.94 ALOX15 (0.41) ALOX15MAPK1HTTESR1ESR2
SCHEMBL22114931 0.94 ALOX15 (0.41) ALOX15MAPK1HTTESR1ESR2
SCHEMBL19651175 0.94 ALOX15 (0.41) ALOX15MAPK1HTTESR1ESR2
SCHEMBL24149957 0.94 KLF10 (0.47) ALOX15MAPK1HTTESR1ESR2
SCHEMBL14665338 0.94 ALOX15 (0.41) ALOX15MAPK1HTTESR1ESR2
SCHEMBL248523 0.94 ESR1 (0.40) ALOX15MAPK1HTTESR1ESR2
SCHEMBL18100867 0.93 ALOX15 (0.50) ALOX15MAPK1HTTESR1ESR2
SCHEMBL15947586 0.92 ALOX15 (0.39) ALOX15MAPK1HTTESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 375 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025128334-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-19 WO disclosed
US-20250189892-A1 POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME FUJIFILM ELECTRONIC MAT USA INC (US) 2025-06-12 US disclosed
US-12312487-B2 Method for forming protective film, method for manufacturing patterned substrate, and composition JSR CORPORATION (JP) 2025-05-27 US disclosed
US-20250110407-A1 SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND RESIST BASE FILM FORMING COMPOSITION JSR CORPORATION (JP) 2025-04-03 US disclosed
US-20240288773-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND COMPOSITION JSR CORPORATION (JP) 2024-08-29 US disclosed
US-20240255852-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-08-01 US disclosed
US-20240242967-A1 Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-18 US disclosed
EP-4400914-A2 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-17 EP disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20070184384-A1 Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2007-08-09 US disclosed
US-20070184384-A1 Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2007-08-09 US disclosed
US-20070148592-A1 Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070148592-A1 Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-28 US disclosed
US-20070141512-A1 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-21 US disclosed
US-20070141512-A1 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-21 US disclosed
US-20070082289-A1 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-04-12 US disclosed
US-20070082289-A1 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-04-12 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed