SCHEMBL110015

SCHEMBL110015

CC(C)(C)c1ccc(C(=O)O[I+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.55
L3MBTL1 Q9Y468 2/20 0.55
MAPT P10636 2/20 0.55
TNF P01375 2/20 0.52
KLF5 Q13887 2/20 0.52
NOD1 Q9Y239 2/20 0.52
NPSR1 Q6W5P4 1/20 0.47
SRD5A2 P31213 1/20 0.46
RAB9A P51151 6/20 0.45
LMNA P02545 1/20 0.45
KCNK9 Q9NPC2 1/20 0.44
NPC1 O15118 4/20 0.43
POLB P06746 1/20 0.43
CASP3 P42574 1/20 0.43
SENP7 Q9BQF6 1/20 0.43
ALDH1A1 P00352 4/20 0.43
HDAC1 Q13547 1/20 0.43
RECQL P46063 1/20 0.43
NOD2 Q9HC29 1/20 0.43
RARB P10826 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL103573 0.86 LMNA (0.48) TDP1L3MBTL1MAPTRAB9ALMNA
SCHEMBL107606 0.82 LMNA (0.54) TDP1MAPTLMNAPOLBALDH1A1
SCHEMBL10003829 0.82 MAPT (0.45) TDP1L3MBTL1MAPTTNFKLF5
SCHEMBL106371 0.81 NPC1 (0.50) TDP1MAPTNPSR1SRD5A2RAB9A
SCHEMBL9878491 0.78 TDP1 (0.69) TDP1L3MBTL1MAPTTNFKLF5
SCHEMBL446400 0.78 TDP1 (0.69) TDP1L3MBTL1MAPTTNFKLF5
SCHEMBL515585 0.77 LMNA (0.47) TDP1L3MBTL1MAPTTNFKLF5
SCHEMBL1790578 0.75 MAPT (0.87) TDP1L3MBTL1MAPTTNFKLF5
SCHEMBL107877 0.74 TDP1 (0.47) TDP1L3MBTL1MAPTRAB9ALMNA
SCHEMBL19875751 0.73 TDP1 (0.63) TDP1L3MBTL1MAPTTNFKLF5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2426558-B1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2018-10-24 EP disclosed
EP-2500775-B1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
US-8951711-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-20140342289-A1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-8852844-B2 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-07 US disclosed
US-8835102-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
EP-2172807-B1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-18 EP disclosed
EP-2172808-B1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-04 EP disclosed
US-8652267-B2 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-8652750-B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
EP-2063319-A1 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-05-27 EP disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed