SCHEMBL111905

SCHEMBL111905

CC1C(=O)N(OS(=O)(=O)CC23CCC(CC2=O)C3(C)C)C(=O)C1C

nearest known ligand 0.55

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.55
MEN1 O00255 3/20 0.55
ALDH1A1 P00352 2/20 0.52
SMN1; SMN2 Q16637 2/20 0.52
F2 P00734 2/20 0.51
PRSS1 P07477 2/20 0.51
PRSS2 P07478 2/20 0.51
PRSS3 P35030 2/20 0.51
KDM4E B2RXH2 1/20 0.49
CYP1A2 P05177 1/20 0.48
CYP2C19 P33261 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.47
GAA P10253 1/20 0.47
PKM P14618 1/20 0.47
CA1 P00915 2/20 0.45
CA2 P00918 2/20 0.45
CA5A P35218 2/20 0.45
CA5B Q9Y2D0 2/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3830397 0.91 KMT2A (0.56) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL14564571 0.87 ALDH1A1 (0.55) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL16519683 0.87 ALDH1A1 (0.55) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL3076355 0.86 KMT2A (0.56) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL135682 0.86 KMT2A (0.56) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL8907321 0.86 KMT2A (0.56) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL3823149 0.86 KMT2A (0.51) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL5552230 0.85 KMT2A (0.55) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL382804 0.84 KMT2A (0.49) KMT2AMEN1ALDH1A1SMN1; SMN2F2
SCHEMBL13437546 0.84 KMT2A (0.49) KMT2AMEN1ALDH1A1SMN1; SMN2F2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 186 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180081277-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-03-22 US disclosed
US-20180011406-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-01-11 US disclosed
US-20170351179-A1 COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-20170199461-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20170199460-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20170184974-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170184970-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170176862-A1 PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170123318-A1 POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
US-20070134589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
US-20070134590-A1 Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent FUJIFILM CORPORATION. (JP) 2007-06-14 US disclosed
US-20070105045-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION 2007-05-10 US disclosed
US-20070082289-A1 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-04-12 US disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed