Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL112239

Cc1cccc(S)c1C.O=S(=O)(O)C(F)(F)F

nearest known ligand 0.45

Full drug profile on Sugi Atlas →

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 2/20 0.45
ATM Q13315 1/20 0.45
KEAP1 Q14145 1/20 0.37
NFE2L2 Q16236 1/20 0.37
HTT P42858 1/20 0.35
MAPT P10636 2/20 0.33
HSD11B1 P28845 2/20 0.33
PTPN1 P18031 1/20 0.33
ALDH1A1 P00352 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
TSHR P16473 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CASP1 P29466 1/20 0.32
HSD17B2 P37059 1/20 0.31
GAA P10253 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP3A4 P08684 1/20 0.31
MAPK1 P28482 1/20 0.31
CYP2C19 P33261 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL5356654 1.00 TRPA1 (0.45) TRPA1ATMKEAP1NFE2L2HTT
Trifluoromethanesulfonic Acid SCHEMBL8088610 0.97 TRPA1 (0.42) TRPA1ATMKEAP1NFE2L2HTT
Sulfuric Acid SCHEMBL482696 0.87 TRPA1 (0.43) TRPA1ATMKEAP1NFE2L2HTT
Sulfuric Acid SCHEMBL3797183 0.87 TRPA1 (0.43) TRPA1ATMKEAP1NFE2L2HTT
SCHEMBL1594212 0.85 TRPA1 (0.35) TRPA1ATMKEAP1NFE2L2HTT
Sulfuric Acid SCHEMBL15345267 0.85 HTT (0.39) TRPA1ATMKEAP1NFE2L2HTT
Trifluoromethanesulfonic Acid SCHEMBL30038181 0.85 MAPT (0.40) TRPA1ATMHTTMAPTHSD11B1
Trifluoromethanesulfonic Acid SCHEMBL28564485 0.85 TRPA1 (0.52) TRPA1ATMKEAP1NFE2L2HTT
SCHEMBL1593373 0.84 TRPA1 (0.34) TRPA1ATMKEAP1NFE2L2HTT
Trifluoromethanesulfonic Acid SCHEMBL29965296 0.84 TRPA1 (0.33) TRPA1ATMMAPTALDH1A1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 89 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119816784-A Fabrication of integrated circuits using positive photo-patternable dielectrics comprising high silicon content polysilsesquioxanes 潍坊星泰克微电子材料有限公司 2025-04-11 CN disclosed
CN-119631021-A Photolithography method using silicon photoresist 潍坊星泰克微电子材料有限公司 2025-03-14 CN disclosed
CN-109388023-B Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming method 信越化学工业株式会社 2023-12-22 CN disclosed
CN-109388022-B Silicone-structure-containing polymer, photosensitive resin composition, photosensitive resin coating layer, photosensitive dry film, laminate, and pattern forming method 信越化学工业株式会社 2023-07-28 CN disclosed
WO-2023068177-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD 信越化学工業株式会社 2023-04-27 WO disclosed
WO-2023017666-A1 SILPHENYLENE-SKELETON-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE 信越化学工業株式会社 2023-02-16 WO disclosed
CN-111205463-B Polysiloxane skeleton polymer, photosensitive resin composition, pattern forming method and manufacturing of optical semiconductor device 信越化学工业株式会社 2023-02-14 CN disclosed
WO-2023276578-A1 LAYERED BODY, METHOD FOR MANUFACTURING LAYERED BODY, AND METHOD FOR FORMING PATTERN 信越化学工業株式会社 2023-01-05 WO disclosed
WO-2022215403-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD 信越化学工業株式会社 2022-10-13 WO disclosed
US-11150556-B2 Polymer of polyimide precursor, positive type photosensitive resin composition, negative type photosensitive resin composition, patterning process, method for forming cured film, interlayer insulating film, surface protective film, and electronic parts SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-10-19 US disclosed
US-20010033989-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-6303264-B1 PROFILE OF PATTERN OF QUARTER MICRON ORDER WITHOUT CAUSING FOOTING, WHILE RETAINING HIGH RESOLUTION ABILITY AND HIGH SENSITIVITY WAKO PURE CHEMICAL INDUSTRIES, LTD (JP) 2001-10-16 US disclosed
US-20010026904-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-04 US disclosed
US-6284429-B1 FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-04 US disclosed
US-20010003772-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICDL CO., LTD. OF (JP) 2001-06-14 US disclosed
US-6156486-A Method for pattern formation and process for preparing semiconductor device HITACHI, LTD. (JP) 2000-12-05 US disclosed
US-6017680-A Method for pattern formation and process for preparing semiconductor device HITACHI, LTD. (JP) 2000-01-25 US disclosed
EP-0704762-B1 Resist material and pattern formation WAKO PURE CHEM IND LTD (JP) 1999-12-15 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed