Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL11265890

N.O=S(=O)(O)OS(=O)(=O)O

nearest known ligand 0.50

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Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA2 P00918 2/20 0.50
TSHR P16473 3/20 0.46
TDP1 Q9NUW8 1/20 0.46
CA5A P35218 2/20 0.42
CA5B Q9Y2D0 2/20 0.42
CA1 P00915 1/20 0.36
NT5E P21589 1/20 0.36
CA4 P22748 1/20 0.36
CA6 P23280 1/20 0.36
CA7 P43166 1/20 0.36
CA9 Q16790 1/20 0.36
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
KMT2A Q03164 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL1691981 1.00 CA2 (0.50) CA2TSHRTDP1CA5ACA5B
Ammonia Solution, Strong SCHEMBL29752566 1.00 CA2 (0.50) CA2TSHRTDP1CA5ACA5B
Ammonia Solution, Strong SCHEMBL9613881 0.96 CA2 (0.47) CA2TSHRTDP1CA5ACA5B
Sulfuric Acid SCHEMBL11682569 0.96 CA5A (0.50) CA2TSHRTDP1CA5ACA5B
SCHEMBL3781 0.95
SCHEMBL56331 0.95 CA2 (0.54) CA2TSHRTDP1CA5ACA5B
Hydroxyamine SCHEMBL11041757 0.92 CA2 (0.44) CA2TSHRTDP1CA5ACA5B
Ammonia Solution, Strong SCHEMBL11669799 0.92 CA2 (0.44) CA2TSHRTDP1CA5ACA5B
Hydroxyamine SCHEMBL11041766 0.92 CA2 (0.44) CA2TSHRTDP1CA5ACA5B
Water SCHEMBL10934974 0.91 CA2 (0.50) CA2TSHRTDP1CA5ACA5B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110219180-A A kind of base fabric processing technology of superfine fiber chemical leather 浙江永祥合成材料有限公司 2019-09-10 CN claimed
CN-101560151-B Process for continuously generating methyl acetate by reactive distillation taking ionic liquid as catalyst NANJING UNIVERSITY OF TECHNOLOGY 2012-10-17 CN claimed
US-4351776-A Preparation of iodophthalonitrile THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) 1982-09-28 US claimed
CN-111348687-B Crystal material, preparation method and application thereof, sodium ion battery positive electrode material, sodium ion battery and equipment 深圳先进技术研究院 2023-02-10 CN disclosed
CN-111348687-A Crystal material, preparation method and application thereof, sodium ion battery positive electrode material, sodium ion battery and equipment 深圳先进技术研究院 2020-06-30 CN disclosed
CN-110219180-A A kind of base fabric processing technology of superfine fiber chemical leather 浙江永祥合成材料有限公司 2019-09-10 CN disclosed
CN-104821337-B The thin film transistor base plate and its manufacturing method for having protective film 国立大学法人奈良先端科学技术大学院大学 2019-04-19 CN disclosed
CN-106750399-B A kind of selfreparing, photaesthesia aquagel and preparation method thereof 盐城工学院 2019-01-25 CN disclosed
CN-106978534-B A kind of method that substep dynamic adjusts acid extraction molybdenum 河北欣芮再生资源利用有限公司 2018-09-25 CN disclosed
CN-104870527-B Composite of metal oxide nanoparticles and silsesquioxane polymer, method for producing same, and composite material produced using same AZ电子材料(卢森堡)有限公司 2018-04-13 CN disclosed
CN-107847479-A For treating the preparaton of acne 阿克苏诺贝尔化学品国际有限公司 2018-03-27 CN disclosed
CN-101133366-A Developer composition, process for producing the same, and process for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2008-02-27 CN disclosed
CN-101032015-A Metal interconnect feature cap on an integrated circuit of an electronic device ENTHONE (US) 2007-09-05 CN disclosed
CN-101013265-A Method of forming corrosion-resistant pattern and method of manufacturing semiconductor device RENESAS TECH CORP (JP) 2007-08-08 CN disclosed
CN-1943018-A Polishing slurry MITSUI CHEMICALS INC (JP) 2007-04-04 CN disclosed
CN-1802609-A Developer composition for resists and method for formation of resist pattern TOKYO OHKA KOGYO LTD (JP) 2006-07-12 CN disclosed
CN-1214292-C Forming method for photoresist design and its laminating products TOKYO OKA GOGYO K K (JP) 2005-08-10 CN disclosed
CN-1120180-C Preparation of aqueous polymer dispersions BASF AG (DE) 2003-09-03 CN disclosed
CN-1424626-A Forming method for photoresist design and its laminating products TOKYO OKA GOGYO K K (JP) 2003-06-18 CN disclosed
CN-1151747-A Preparation of aqueous polymer dispersions BASF AG (DE) 1997-06-11 CN disclosed