SCHEMBL1151138

SCHEMBL1151138

CC1(C2(C(=O)O)CC3C=CC2C3)CCCC1

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 1/20 0.33
CYP2C19 P33261 1/20 0.33
P2RX7 Q99572 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1349276 0.98 CYP2D6 (0.33) CYP2D6CYP2C19
SCHEMBL2349829 0.82
SCHEMBL17948249 0.79 MEN1 (0.30)
SCHEMBL7201976 0.75 HSD11B1 (0.32) CYP2D6CYP2C19
SCHEMBL6758976 0.75
SCHEMBL5318549 0.73 CYP2D6 (0.32) CYP2D6CYP2C19
SCHEMBL12191694 0.72 P2RX7 (0.41) CYP2D6CYP2C19P2RX7
SCHEMBL5423530 0.72 P2RX7 (0.41) CYP2D6CYP2C19P2RX7
SCHEMBL7201981 0.72 HSD11B1 (0.31) CYP2D6CYP2C19
SCHEMBL32688678 0.72 P2RX7 (0.41) CYP2D6CYP2C19P2RX7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8334088-B2 Functionalized carbosilane polymers and photoresist compositions containing the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-12-18 US disclosed
US-8247162-B2 Methods of forming a pattern using photoresist compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-21 US disclosed
US-20110045407-A1 Functionalized Carbosilane Polymers and Photoresist Compositions Containing the Same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-02-24 US disclosed
US-7883828-B2 generating a resist image with polycarbosilanes as acid generator, having acid labile functionality; high refractive index (n>1.7) and absorbance at 193 nm that is relatively low (A<3.00 mu m-1); aqueous base soluble; suitable for use immersion lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-02-08 US disclosed
US-7824845-B2 Functionalized carbosilane polymers and photoresist compositions containing the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-11-02 US disclosed
US-20100266966-A1 Methods of forming a pattern using photoresist compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-10-21 US disclosed
US-20090081598-A1 FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-03-26 US disclosed
US-20090081597-A1 generating a resist image with polycarbosilanes as acid generator, having acid labile functionality; high refractive index (n>1.7) and absorbance at 193 nm that is relatively low (A<3.00 mu m-1); aqueous base soluble; suitable for use immersion lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-03-26 US disclosed
US-20090081579-A1 FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-03-26 US disclosed
US-20090081585-A1 FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-03-26 US disclosed