⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1450176 | 1.00 | — | — | |
| SCHEMBL9509929 | 0.67 | — | — | |
| SCHEMBL9509932 | 0.67 | — | — | |
| SCHEMBL19509996 | 0.67 | — | — | |
| SCHEMBL20605353 | 0.65 | — | — | |
| Phorone SCHEMBL27801489 | 0.65 | LMNA (0.36) | — | |
| SCHEMBL12131649 | 0.62 | — | — | |
| SCHEMBL5986869 | 0.62 | — | — | |
| SCHEMBL8464237 | 0.62 | — | — | |
| SCHEMBL8467322 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 318 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025061949-A2 | METHOD AND DEVICE FOR MASK REPAIR | CARL ZEISS SMT GMBH (DE) | 2025-03-27 | — | — | WO | claimed |
| WO-2024096246-A1 | METAL COMPOSITE CATALYST FOR AMMONIA DECOMPOSITION, AND PREPARATION METHOD THEREFOR | 한국에너지기술연구원 | 2024-05-10 | — | — | WO | claimed |
| US-20220301882-A1 | SURFACE PROCESSING METHOD AND PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2022-09-22 | — | — | US | claimed |
| US-11387112-B2 | Surface processing method and processing system | TOKYO ELECTRON LIMITED (JP) | 2022-07-12 | — | — | US | claimed |
| US-11289745-B2 | Elimination of gaseous reactants in lithium ion batteries | GM Global Technology Operations LLC (US) | 2022-03-29 | — | — | US | claimed |
| US-11024535-B2 | Method for filling recessed features in semiconductor devices with a low-resistivity metal | TOKYO ELECTRON LIMITED (JP) | 2021-06-01 | — | — | US | claimed |
| US-20200220234-A1 | ELIMINATION OF GASEOUS REACTANTS IN LITHIUM ION BATTERIES | GM Global Technology Operations LLC (US) | 2020-07-09 | — | — | US | claimed |
| US-20200111675-A1 | SURFACE PROCESSING METHOD AND PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2020-04-09 | — | — | US | claimed |
| US-10421703-B2 | Ruthenium-phenol catalysts for transfer hydrogenation reactions | BASF SE (DE) | 2019-09-24 | — | — | US | claimed |
| US-10014213-B2 | Selective bottom-up metal feature filling for interconnects | TOKYO ELECTRON LIMITED (JP) | 2018-07-03 | — | — | US | claimed |
| US-20060223310-A1 | Method for forming a barrier/seed layer for copper metallization | TOKYO ELECTRON LIMITED | 2006-10-05 | — | — | US | claimed |
| WO-2006101646-A1 | METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE | TOKYO ELECTRON LIMITED (JP) | 2006-09-28 | — | — | WO | claimed |
| US-20060211228-A1 | A METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE | TOKYO ELECTRON LIMITED (JP) | 2006-09-21 | — | — | US | claimed |
| US-20060199372-A1 | Reduction of copper dewetting by transition metal deposition | APPLIED MATERIALS, INC. | 2006-09-07 | — | — | US | claimed |
| US-20060153973-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2006-07-13 | — | — | US | claimed |
| WO-2005098938-A1 | RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION | APPLIED MATERIALS, INC. (US) | 2005-10-20 | — | — | WO | claimed |
| US-20050085031-A1 | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers | APPLIED MATERIALS, INC. | 2005-04-21 | — | — | US | claimed |
| WO-2005020317-A2 | RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION | APPLIED MATERIALS, INC. (US) | 2005-03-03 | — | — | WO | claimed |
| US-20040241321-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2004-12-02 | — | — | US | claimed |
| US-20040105934-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2004-06-03 | — | — | US | claimed |