⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1168637 | 1.00 | — | — | |
| SCHEMBL9509929 | 0.67 | — | — | |
| SCHEMBL9509932 | 0.67 | — | — | |
| SCHEMBL19509996 | 0.67 | — | — | |
| SCHEMBL20605353 | 0.65 | — | — | |
| Phorone SCHEMBL27801489 | 0.65 | LMNA (0.36) | — | |
| SCHEMBL12131649 | 0.62 | — | — | |
| SCHEMBL5986869 | 0.62 | — | — | |
| SCHEMBL8464237 | 0.62 | — | — | |
| SCHEMBL8467322 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 131 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220301882-A1 | SURFACE PROCESSING METHOD AND PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2022-09-22 | — | — | US | claimed |
| US-11387112-B2 | Surface processing method and processing system | TOKYO ELECTRON LIMITED (JP) | 2022-07-12 | — | — | US | claimed |
| US-20200111675-A1 | SURFACE PROCESSING METHOD AND PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2020-04-09 | — | — | US | claimed |
| EP-2520690-B1 | RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM AND METHOD FOR PRODUCING A RUTHENIUM-CONTAINING FILM | TOSOH CORP (JP) | 2018-04-11 | — | — | EP | claimed |
| US-8742153-B2 | Ruthenium complex mixture, method of producing the same, composition for film formation, ruthenium-containing film, and method of producing the same | TOSOH CORPORATION (JP) | 2014-06-03 | — | — | US | claimed |
| US-8492157-B2 | Microfluidic device and hemoglobin measurement method using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-07-23 | — | — | US | claimed |
| US-20130059078-A1 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS | AMERICAN AIR LIQUIDE, INC. | 2013-03-07 | — | — | US | claimed |
| EP-2520690-A1 | RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM, RUTHENIUM-CONTAINING FILM AND METHOD FOR PRODUCING SAME | Tosoh Corporation (JP) | 2012-11-07 | — | — | EP | claimed |
| US-20120227625-A1 | RUTHENIUM COMPLEX MIXTURE, METHOD OF PRODUCING THE SAME, COMPOSITION FOR FILM FORMATION, RUTHENIUM-CONTAINING FILM, AND METHOD OF PRODUCING THE SAME | TOSOH CORPORATION (JP) | 2012-09-13 | — | — | US | claimed |
| US-20120122139-A1 | MICROFLUIDIC DEVICE AND HEMOGLOBIN MEASUREMENT METHOD USING THE SAME | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2012-05-17 | — | — | US | claimed |
| US-7737028-B2 | Selective ruthenium deposition on copper materials | APPLIED MATERIALS, INC. (US) | 2010-06-15 | — | — | US | claimed |
| US-20090142474-A1 | RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION | APPLIED MATERIALS, INC. | 2009-06-04 | — | — | US | claimed |
| US-20090087982-A1 | SELECTIVE RUTHENIUM DEPOSITION ON COPPER MATERIALS | APPLIED MATERIALS, INC. | 2009-04-02 | — | — | US | claimed |
| US-20070259111-A1 | METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM | APPLIED MATERIALS, INC. | 2007-11-08 | — | — | US | claimed |
| US-20060153973-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2006-07-13 | — | — | US | claimed |
| WO-2005098938-A1 | RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION | APPLIED MATERIALS, INC. (US) | 2005-10-20 | — | — | WO | claimed |
| US-20050085031-A1 | Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers | APPLIED MATERIALS, INC. | 2005-04-21 | — | — | US | claimed |
| WO-2005020317-A2 | RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION | APPLIED MATERIALS, INC. (US) | 2005-03-03 | — | — | WO | claimed |
| US-20040241321-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2004-12-02 | — | — | US | claimed |
| US-20040105934-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2004-06-03 | — | — | US | claimed |