SCHEMBL11892181

SCHEMBL11892181

CC(C)=CC(C(=O)OC(C)(C)C)C(C)(C)C

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.32
CA14 Q9ULX7 1/20 0.32
LMNA P02545 1/20 0.31
KMT2A Q03164 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
DGAT1 O75907 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12998277 0.81 SMN1; SMN2 (0.37) CA12CA14CA1CA2
SCHEMBL27948182 0.77 LMNA (0.32) LMNAKMT2ACA1CA2CA7
SCHEMBL20007733 0.75 CA1 (0.34) LMNAKMT2ACA1CA2CA7
SCHEMBL13671542 0.75 CA1 (0.34) LMNAKMT2ACA1CA2CA7
SCHEMBL9947158 0.75 TSHR (0.35)
SCHEMBL13287183 0.75 PDK1 (0.30)
SCHEMBL12309007 0.73 HTT (0.47)
SCHEMBL12015628 0.73
SCHEMBL9926307 0.73 GRIN2D (0.31)
SCHEMBL9926309 0.71 LMNA (0.32) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8227183-B2 Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation FUJIFILM CORPORATION (JP) 2012-07-24 US disclosed
US-7875746-B2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2011-01-25 US disclosed
WO-2010111345-A1 SELF-FORMING TOP ANTI-REFLECTIVE COATING COMPOSITIONS AND, PHOTORESIST MIXTURES AND METHOD OF IMAGING USING SAME INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-09-30 WO disclosed
US-7629107-B2 Positive photosensitive composition, polymer compounds for use in the positive photosensitive composition, manufacturing method of the polymer compounds, compounds for use in the manufacture of the polymer compounds, and pattern-forming method using the positive photosensitive composition FUJIFILM CORPORATION (JP) 2009-12-08 US disclosed
US-7625690-B2 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2009-12-01 US disclosed
EP-2040122-A2 Positive resist composition and pattern-forming method using the same Fujifilm Corporation (JP) 2009-03-25 EP disclosed
US-20080187860-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080085464-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed