SCHEMBL11903271

SCHEMBL11903271

C=Cc1cccc(OCc2ccc(Cl)cc2)c1

nearest known ligand 0.61

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
MAOB P27338 9/20 0.61
MAOA P21397 6/20 0.61
TLR4 O00206 1/20 0.61
TLR2 O60603 1/20 0.61
GPR18 Q14330 2/20 0.58
GPR55 Q9Y2T6 1/20 0.58
CNR1 P21554 2/20 0.55
NR4A2 P43354 1/20 0.55
NPC1 O15118 1/20 0.51
RAB9A P51151 1/20 0.51
TDP1 Q9NUW8 1/20 0.51
CNR2 P34972 2/20 0.51
LCK P06239 1/20 0.50
SPHK2 Q9NRA0 1/20 0.50
SMPD1 P17405 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2265668 0.85 MAOB (0.71) MAOBMAOATLR4TLR2NR4A2
SCHEMBL7901722 0.84 MAOB (0.53) MAOBMAOATLR4TLR2NPC1
SCHEMBL8985612 0.84 MAOB (0.74) MAOBMAOATLR4TLR2GPR18
SCHEMBL30821439 0.84 MAOB (0.74) MAOBMAOATLR4TLR2GPR18
SCHEMBL24742460 0.80 MAOB (0.61) MAOBMAOANR4A2NPC1RAB9A
SCHEMBL11903428 0.80 MAOB (0.61) MAOBMAOANR4A2NPC1RAB9A
SCHEMBL21906201 0.80 MAOA (0.72) MAOBMAOATLR4TLR2NPC1
SCHEMBL29640437 0.80 MAOA (0.72) MAOBMAOATLR4TLR2NPC1
SCHEMBL6331449 0.79 MAOB (0.58) MAOBMAOATLR4TLR2GPR18
SCHEMBL6331451 0.79 MAOB (0.58) MAOBMAOATLR4TLR2GPR18

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2721446-B1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORP (JP) 2017-11-22 EP disclosed
EP-2707776-B1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK AND RESIST PATTERN FORMING METHOD EACH USING THE COMPOSITION FUJIFILM CORP (JP) 2017-07-19 EP disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-20160342090-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2016-11-24 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9235116-B2 Actinic-ray- or radiation sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-01-12 US disclosed
US-9223215-B2 Actinic ray-sensitive or radiation-sensitive composition, actinic ray-sensitive or radiation-sensitive film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9188865-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 US disclosed
WO-2013141395-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-09-26 WO disclosed
WO-2013133396-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-09-12 WO disclosed
WO-2013081184-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2013-06-06 WO disclosed
WO-2013047895-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF RESIN FUJIFILM CORPORATION (JP) 2013-04-04 WO disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
WO-2012173282-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-12-20 WO disclosed
WO-2012153869-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-11-15 WO disclosed
US-20120214091-A1 RESIST FILM, RESIST COATED MASK BLANKS AND METHOD OF FORMING RESIST PATTERN USING THE RESIST FILM, AND CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-23 US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 US disclosed