SCHEMBL11903428

SCHEMBL11903428

C=Cc1ccc(OCc2ccc(Cl)cc2)cc1

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOB P27338 5/20 0.61
APP P05067 2/20 0.61
KMT2A Q03164 2/20 0.56
LMNA P02545 2/20 0.56
KDM4E B2RXH2 1/20 0.56
NPC1 O15118 1/20 0.56
RAB9A P51151 1/20 0.56
CCR6 P51684 1/20 0.56
UBE2N P61088 1/20 0.56
NPSR1 Q6W5P4 1/20 0.56
NR4A2 P43354 1/20 0.54
MAOA P21397 1/20 0.53
ABCG2 Q9UNQ0 1/20 0.52
PTPN1 P18031 1/20 0.50
DHFR P00374 1/20 0.49
MEN1 O00255 1/20 0.47
MAPT P10636 1/20 0.47
TDP1 Q9NUW8 1/20 0.47
L3MBTL1 Q9Y468 1/20 0.47
BCHE P06276 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24742460 1.00 MAOB (0.61) MAOBAPPKMT2ALMNAKDM4E
SCHEMBL24742467 0.95 MAOB (0.56) MAOBAPPKMT2ALMNAKDM4E
SCHEMBL13242652 0.91 APP (0.54) MAOBAPPNPC1RAB9APTPN1
SCHEMBL6388039 0.91 APP (0.54) MAOBAPPNPC1RAB9APTPN1
SCHEMBL8745237 0.86 HPGD (0.54) MAOBAPPKMT2ALMNAKDM4E
SCHEMBL31453872 0.85 APP (0.48) APPNPC1RAB9APTPN1HPGD
SCHEMBL10991891 0.84 MAOB (0.80) MAOBAPPKMT2ALMNAKDM4E
SCHEMBL2849932 0.84 APP (0.59) APPKMT2ALMNAKDM4ENPC1
SCHEMBL18546472 0.82 MAOB (0.61) MAOBAPPNPC1RAB9AMAOA
SCHEMBL21244006 0.82 APP (0.61) MAOBAPPNPC1RAB9APTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2721446-B1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORP (JP) 2017-11-22 EP disclosed
EP-2707776-B1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK AND RESIST PATTERN FORMING METHOD EACH USING THE COMPOSITION FUJIFILM CORP (JP) 2017-07-19 EP disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-20160342090-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2016-11-24 US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 US disclosed
US-9459531-B2 2016-10-04 US disclosed
US-9235116-B2 Actinic-ray- or radiation sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-01-12 US disclosed
US-9223215-B2 Actinic ray-sensitive or radiation-sensitive composition, actinic ray-sensitive or radiation-sensitive film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9188865-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 US disclosed
WO-2013141395-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-09-26 WO disclosed
WO-2013133396-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-09-12 WO disclosed
WO-2013081184-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2013-06-06 WO disclosed
WO-2013047895-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF RESIN FUJIFILM CORPORATION (JP) 2013-04-04 WO disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
WO-2012173282-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-12-20 WO disclosed
WO-2012153869-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-11-15 WO disclosed
US-20120214091-A1 RESIST FILM, RESIST COATED MASK BLANKS AND METHOD OF FORMING RESIST PATTERN USING THE RESIST FILM, AND CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-23 US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 US disclosed