SCHEMBL11922896

SCHEMBL11922896

CCC(C)c1cccc(OC(=O)c2ccccc2C)c1

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 1/20 0.63
KMT2A Q03164 4/20 0.49
MEN1 O00255 3/20 0.49
NPC1 O15118 1/20 0.49
CASP3 P42574 1/20 0.49
SENP8 Q96LD8 1/20 0.49
SENP7 Q9BQF6 1/20 0.49
SENP6 Q9GZR1 1/20 0.49
ACHE P22303 6/20 0.45
BCHE P06276 5/20 0.45
FAAH O00519 1/20 0.45
MAPT P10636 5/20 0.44
LMNA P02545 1/20 0.44
HDAC4 P56524 1/20 0.43
HDAC2 Q92769 1/20 0.43
HDAC8 Q9BY41 1/20 0.43
ESR1 P03372 1/20 0.42
ESR2 Q92731 1/20 0.42
CYP1A2 P05177 2/20 0.41
CYP2C19 P33261 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15503745 0.85 KMT2A (0.53) HTTKMT2AMEN1NPC1CASP3
SCHEMBL15580589 0.84 HTT (0.46) HTTACHEBCHEFAAHHDAC4
SCHEMBL12133492 0.82 KMT2A (0.49) HTTKMT2AMEN1ACHEBCHE
SCHEMBL11663752 0.81 KMT2A (0.63) HTTKMT2AMEN1NPC1CASP3
SCHEMBL1792446 0.79 CYP3A4 (0.53) KMT2AMEN1ACHEBCHEFAAH
SCHEMBL16592916 0.78 HDAC4 (0.48) KMT2AMEN1ACHEBCHEFAAH
SCHEMBL1790707 0.77 ACHE (0.55) KMT2AACHEBCHEFAAHLMNA
SCHEMBL1790126 0.77 MAPT (0.50) KMT2AMAPTLMNAHDAC4HDAC2
SCHEMBL4250299 0.76 KMT2A (0.69) HTTKMT2AMEN1NPC1CASP3
SCHEMBL29576345 0.76 KMT2A (0.69) HTTKMT2AMEN1NPC1CASP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-20160018734-A1 PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-21 US disclosed
US-9235120-B2 Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask FUJIFILM CORPORATION (JP) 2016-01-12 US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 US disclosed
US-9091927-B2 Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20140342275-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-11-20 US disclosed
US-20140178806-A1 NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-06-26 US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 US disclosed
US-20140072905-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-03-13 US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 US disclosed