SCHEMBL11922912

SCHEMBL11922912

CCC(C)(C)c1ccc(OC(=O)c2ccccc2S(=O)(=O)O)cc1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TDP1 Q9NUW8 2/20 0.59
▸ MAPT P10636 4/20 0.48
▸ NPSR1 Q6W5P4 2/20 0.48
▸ L3MBTL1 Q9Y468 1/20 0.43
▸ NPC1 O15118 3/20 0.42
▸ RAB9A P51151 3/20 0.42
▸ CYP2C9 P11712 2/20 0.42
▸ POLB P06746 1/20 0.42
▸ CASP1 P29466 1/20 0.42
▸ CYP1A2 P05177 1/20 0.41
▸ CYP2C19 P33261 1/20 0.41
▸ CA1 P00915 1/20 0.38
▸ CA2 P00918 1/20 0.38
▸ CA5A P35218 1/20 0.38
▸ CA9 Q16790 1/20 0.38
▸ HPGD P15428 1/20 0.38
▸ ALOX15 P16050 1/20 0.38
▸ HSD17B10 Q99714 1/20 0.38
▸ KMT2A Q03164 2/20 0.38
▸ MEN1 O00255 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8205574 0.82 TDP1 (0.67) TDP1MAPTNPSR1L3MBTL1NPC1
SCHEMBL9769806 0.80 TDP1 (0.60) TDP1MAPTNPSR1L3MBTL1NPC1
SCHEMBL8901165 0.80 HSD17B10 (0.58) TDP1MAPTNPSR1L3MBTL1CYP2C9
SCHEMBL15589473 0.79 HPGD (0.45) TDP1MAPTNPSR1CYP2C9CASP1
SCHEMBL11922867 0.78 HPGD (0.47) TDP1MAPTNPSR1L3MBTL1NPC1
SCHEMBL9717128 0.77 HPGD (0.47) TDP1MAPTNPSR1L3MBTL1NPC1
SCHEMBL19621104 0.77 HPGD (0.43) TDP1MAPTNPSR1CYP2C9CASP1
SCHEMBL1787789 0.75 MAPT (0.62) TDP1MAPTNPSR1L3MBTL1NPC1
SCHEMBL11922932 0.74 TDP1 (0.44) TDP1MAPTNPSR1NPC1RAB9A
SCHEMBL11575738 0.73 TDP1 (0.55) TDP1MAPTNPSR1L3MBTL1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9235120-B2 Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask FUJIFILM CORPORATION (JP) 2016-01-12 — — US disclosed
US-20140178806-A1 NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-06-26 — — US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 — — US disclosed
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