SCHEMBL11922937

SCHEMBL11922937

C=Cc1ccc2cc(OC(=O)c3ccccc3S(=O)(=O)O)ccc2c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 6/20 0.41
▸ MEN1 O00255 4/20 0.41
▸ ESR1 P03372 4/20 0.41
▸ ESR2 Q92731 3/20 0.41
▸ NPC1 O15118 1/20 0.41
▸ CASP3 P42574 1/20 0.41
▸ SENP8 Q96LD8 1/20 0.41
▸ SENP7 Q9BQF6 1/20 0.41
▸ SENP6 Q9GZR1 1/20 0.41
▸ PKM P14618 1/20 0.41
▸ MAPT P10636 3/20 0.40
▸ TDP1 Q9NUW8 2/20 0.40
▸ MAOB P27338 1/20 0.38
▸ ALDH1A1 P00352 2/20 0.37
▸ HSD17B10 Q99714 1/20 0.37
▸ MCL1 Q07820 2/20 0.36
▸ PTGS1 P23219 1/20 0.35
▸ MMP1 P03956 1/20 0.35
▸ MMP12 P39900 1/20 0.35
▸ POLB P06746 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11922932 0.88 TDP1 (0.44) KMT2AMEN1NPC1CASP3SENP8
SCHEMBL11922907 0.75 ESR1 (0.43) KMT2AMEN1ESR1ESR2NPC1
SCHEMBL8901165 0.75 HSD17B10 (0.58) KMT2AMAPTTDP1ALDH1A1HSD17B10
SCHEMBL9717128 0.73 HPGD (0.47) KMT2AMEN1NPC1SENP8SENP7
SCHEMBL73854 0.70 KDM4E (0.56) KMT2AMEN1MAPTTDP1POLB
SCHEMBL20643582 0.70 ELANE (0.50) KMT2AMEN1NPC1MAPTALDH1A1
SCHEMBL15802810 0.69 KMT2A (0.36) KMT2AMEN1ESR1ESR2NPC1
SCHEMBL5942115 0.69 KMT2A (0.50) KMT2AMEN1NPC1MAPTTDP1
SCHEMBL15831176 0.68 ESR1 (0.39) KMT2AMEN1ESR1ESR2MAPT
SCHEMBL9472028 0.68 HPGD (0.67) KMT2AMEN1CASP3SENP8SENP7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 — — US disclosed
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