SCHEMBL73854

SCHEMBL73854

C=Cc1ccc2cc(OC(C)=O)ccc2c1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.56
LMNA P02545 3/20 0.56
CYP3A4 P08684 2/20 0.56
MEN1 O00255 1/20 0.56
TTR P02766 1/20 0.56
TP53 P04637 1/20 0.56
MAPT P10636 1/20 0.56
KMT2A Q03164 1/20 0.56
SMN1; SMN2 Q16637 1/20 0.56
CA12 O43570 2/20 0.50
CA9 Q16790 2/20 0.50
TUBB4A P04350 2/20 0.48
TUBB P07437 2/20 0.48
TUBA3C P0DPH7 2/20 0.48
TUBA1B P68363 2/20 0.48
TUBA4A P68366 2/20 0.48
TUBB4B P68371 2/20 0.48
TUBB3 Q13509 2/20 0.48
TUBB2A Q13885 2/20 0.48
TUBB8 Q3ZCM7 2/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3624975 0.97 KDM4E (0.53) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL3627086 0.97 KDM4E (0.53) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL3901606 0.97 KDM4E (0.53) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL21884807 0.85 ELANE (0.47) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL9607826 0.85 ELANE (0.45) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL8595930 0.84 KDM4E (0.57) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL28436090 0.84 LMNA (0.61) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL72231 0.83 MAPT (0.59) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL3974361 0.83 CA12 (0.65) KDM4ELMNACYP3A4MEN1TTR
SCHEMBL30595409 0.83 CA12 (0.65) KDM4ELMNACYP3A4MEN1TTR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 87 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024127808-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2024-06-20 WO disclosed
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
WO-2023195255-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2023-10-12 WO disclosed
WO-2023189502-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE JSR株式会社 2023-10-05 WO disclosed
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-20220413385-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2022-12-29 US disclosed
US-20090202940-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-20090186300-A1 RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186300-A1 RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-23 US disclosed
US-20090142699-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
US-20090142699-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
JP-2008303179-A 2-ACETOXY-6-VINYLNAPHTHALENE AND METHOD FOR PRODUCING THE SAME TOSOH ORGANIC CHEMICAL CO LTD 2008-12-18 JP disclosed
EP-1990854-A1 SEPARATION MEMBRANE FOR DIRECT LIQUID FUEL CELL AND METHOD FOR PRODUCING SAME Tokuyama Corporation (JP) 2008-11-12 EP disclosed
US-20080020290-A1 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 KDM4E 1445/4885LMNA 1058/4885CYP3A4 2586/4885
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND RER1, RAD51, RFT1 KDM4E 1854/4885LMNA 2894/4885CYP3A4 3647/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.