SCHEMBL119569

SCHEMBL119569

CCC(CC(C)c1ccc(OC(=O)OC(C)(C)C)cc1)c1ccc(O)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 4/20 0.46
ESR1 P03372 5/20 0.38
ESR2 Q92731 2/20 0.38
ALDH1A1 P00352 1/20 0.37
TSHR P16473 1/20 0.37
KDM1A O60341 1/20 0.36
HIF1A Q16665 1/20 0.36
FFAR1 O14842 1/20 0.34
CYP2C9 P11712 2/20 0.34
NPC1 O15118 2/20 0.34
RAB9A P51151 2/20 0.34
HSD17B10 Q99714 1/20 0.34
TDP1 Q9NUW8 2/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33
PGR P06401 1/20 0.33
CHRM2 P08172 1/20 0.33
CYP3A4 P08684 1/20 0.33
ADORA3 P0DMS8 1/20 0.33
AR P10275 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14427949 1.00 ELANE (0.46) ELANEESR1ESR2ALDH1A1TSHR
SCHEMBL18327369 0.90 ELANE (0.46) ELANEESR1ALDH1A1TSHRKDM1A
SCHEMBL14067018 0.90 ELANE (0.53) ELANEESR1ESR2ALDH1A1TSHR
SCHEMBL14067025 0.89 ELANE (0.45) ELANEESR1KDM1AFFAR1L3MBTL1
SCHEMBL26374270 0.89 ELANE (0.37) ELANEESR1ESR2ALDH1A1TSHR
SCHEMBL13922735 0.88 ELANE (0.44) ELANEESR1ALDH1A1TSHRKDM1A
SCHEMBL14067001 0.86 ELANE (0.40) ELANEALDH1A1TSHRKDM1A
SCHEMBL22183767 0.84 ELANE (0.42) ELANEESR1ESR2KDM1A
SCHEMBL2736401 0.83 ALDH1A1 (0.47) ESR1ESR2ALDH1A1TSHRFFAR1
SCHEMBL111624 0.83 ELANE (0.57) ELANEESR1ALDH1A1TSHRKDM1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9217919-B2 Photosensitive composition, pattern-forming method using the composition, and resin used in the composition FUJIFILM CORPORATION (JP) 2015-12-22 US disclosed
US-8895226-B2 Coating composition for DUV filtering, method of forming photoresist pattern using the same and method of fabricating semiconductor device by using the method SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-11-25 US disclosed
US-8895226-B2 Coating composition for DUV filtering, method of forming photoresist pattern using the same and method of fabricating semiconductor device by using the method SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-11-25 US disclosed
US-20140205950-A1 COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-07-24 US disclosed
US-20140205950-A1 COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-07-24 US disclosed
US-8304177-B2 Process for producing ink jet head CANON KABUSHIKI KAISHA (JP) 2012-11-06 US disclosed
US-20120058433-A1 PROCESS FOR PRODUCING INK JET HEAD CANON KABUSHIKI KAISHA (JP) 2012-03-08 US disclosed
US-20120021355-A1 COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-01-26 US disclosed
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-06-30 US disclosed
US-7465529-B2 Radiation sensitive material and method for forming pattern FUJITSU LIMITED (JP) 2008-12-16 US disclosed
US-7179580-B2 Radiation sensitive material and method for forming pattern FUJITSU LIMITED (JP) 2007-02-20 US disclosed
US-20070037090-A1 Copolymer of di-tert-butyl, di-tetrahydropyranyl or di-oxocyclohexyl itaconate and adamantyl, norbornanyl, perhydroanthracenyl or perhydrodimethanonaphthyl (meth)acrylate and a photo-acid initiator; good transparency and etching resistance, high sensitivity, and little peeling. FUJITSU LIMITED 2007-02-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION SUN2, LCP1, PHYKPL ELANE 1810/4885ESR1 1396/4885ESR2 1722/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.