Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CXCR3 | P49682 | 2/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | EPHX2 | P34913 | 3/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6938983 | 0.82 | CXCR3 (0.42) | CXCR3ALDH1A1EPHX2LMNAKMT2A | |
| SCHEMBL11965882 | 0.79 | GAA (0.42) | ALDH1A1EPHX2LMNAMEN1HTT | |
| SCHEMBL11965856 | 0.77 | CXCR3 (0.40) | CXCR3ALDH1A1EPHX2LMNAKMT2A | |
| SCHEMBL14094019 | 0.75 | CXCR3 (0.36) | CXCR3ALDH1A1EPHX2LMNAMEN1 | |
| SCHEMBL4436660 | 0.74 | CXCR3 (0.44) | CXCR3ALDH1A1EPHX2LMNA | |
| SCHEMBL20312888 | 0.74 | CXCR3 (0.48) | CXCR3ALDH1A1EPHX2LMNA | |
| SCHEMBL14117948 | 0.73 | CXCR3 (0.35) | CXCR3ALDH1A1EPHX2LMNAMEN1 | |
| SCHEMBL8055582 | 0.72 | CXCR3 (0.43) | CXCR3ALDH1A1EPHX2LMNA | |
| SCHEMBL864247 | 0.72 | CXCR3 (0.43) | CXCR3ALDH1A1EPHX2LMNA | |
| SCHEMBL26720360 | 0.72 | CXCR3 (0.43) | CXCR3ALDH1A1EPHX2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9188857-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9188857-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20130252181-A1 | RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON | MITSUBISHI RAYON CO., LTD. (JP) | 2013-09-26 | — | — | US | disclosed |
| US-20130252181-A1 | RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON | MITSUBISHI RAYON CO., LTD. (JP) | 2013-09-26 | — | — | US | disclosed |
| US-8476401-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2013-07-02 | — | — | US | disclosed |
| US-8241829-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8241829-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8049042-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8049042-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-20110144295-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2011-06-16 | — | — | US | disclosed |
| US-20110144295-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2011-06-16 | — | — | US | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20080032241-A1 | Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2008-02-07 | — | — | US | disclosed |
| US-20080032241-A1 | Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2008-02-07 | — | — | US | disclosed |
| US-20070190449-A1 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
| US-20070190449-A1 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | CHRM1, CHRM2, PKN2 | CXCR3 1483/4885ALDH1A1 3349/4885EPHX2 2148/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.