Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 3/20 | 0.50 |
| ▸ | CYP17A1 | P05093 | 2/20 | 0.50 |
| ▸ | HSD11B1 | P28845 | 4/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | OPRM1 | P35372 | 3/20 | 0.31 |
| ▸ | OPRD1 | P41143 | 3/20 | 0.31 |
| ▸ | OPRK1 | P41145 | 3/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL854489 | 0.88 | CYP17A1 (0.45) | CYP19A1CYP17A1ALDH1A1 | |
| SCHEMBL12197282 | 0.87 | CYP17A1 (0.49) | CYP19A1CYP17A1HSD11B1ALDH1A1 | |
| SCHEMBL17322536 | 0.85 | CYP19A1 (0.50) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL2814700 | 0.83 | CYP19A1 (0.49) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL21662298 | 0.83 | CYP19A1 (0.49) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL210037 | 0.83 | CYP19A1 (0.49) | CYP19A1CYP17A1HSD11B1ALDH1A1 | |
| SCHEMBL4742225 | 0.83 | CYP19A1 (0.49) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL13821615 | 0.83 | CYP19A1 (0.49) | CYP19A1CYP17A1HSD11B1 | |
| SCHEMBL547984 | 0.83 | CYP19A1 (0.49) | CYP19A1CYP17A1HSD11B1ALDH1A1 | |
| SCHEMBL7964787 | 0.82 | CYP17A1 (0.46) | CYP19A1CYP17A1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11860540-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-02 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230350296-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230314944-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20230288804-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-14 | — | — | US | disclosed |
| US-11709427-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20080248417-A1 | Polyhydric phenol compound and chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1886989-A1 | CALIXRESORCINARENE COMPOUND, PHOTORESIST BASE COMPRISING THE SAME, AND COMPOSITION THEREOF | Watanabe, Takeo (JP) | 2008-02-13 | — | — | EP | disclosed |
| US-20080032232-A1 | Novel resins and photoresist compositions comprising same | SHIPLEY COMPANY, L.L.C. (US) | 2008-02-07 | — | — | US | disclosed |
| US-20070190451-A1 | Calixresorcinarene compounds, photoresist base materials, and compositions thereof | IDEMITSU KOSAN CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
| US-20070190451-A1 | Calixresorcinarene compounds, photoresist base materials, and compositions thereof | IDEMITSU KOSAN CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
| US-7244542-B2 | Resins and photoresist compositions comprising same | SHIPLEY COMPANY, L.L.C. (US) | 2007-07-17 | — | — | US | disclosed |
| US-20070148592-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070082289-A1 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-04-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CYP19A1 3684/4885CYP17A1 2516/4885HSD11B1 2144/4885 |
| US-11709427-B2 | Positive resist composition and pattern forming process | EWSR1, PARG, VIM | CYP19A1 3736/4885CYP17A1 1964/4885HSD11B1 3275/4885 |
| US-20080248417-A1 | Polyhydric phenol compound and chemically amplified resist composition containing the same | CCNA1, C1R, CCNA2 | CYP19A1 913/4885CYP17A1 923/4885HSD11B1 1270/4885 |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | PPOX, TYR, ERCC4 | CYP19A1 637/4885CYP17A1 1328/4885HSD11B1 2709/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.