SCHEMBL12013162

SCHEMBL12013162

CC(=O)OC1CC2C3CC(C)C(C3)C2C1

nearest known ligand 0.38

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CHRM2 P08172 5/20 0.38
CHRM1 P11229 3/20 0.38
CHRM4 P08173 2/20 0.38
CHRM5 P08912 2/20 0.38
CHRM3 P20309 2/20 0.38
TSHR P16473 1/20 0.33
MEN1 O00255 1/20 0.30
CYP2D6 P10635 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12013721 1.00 CHRM2 (0.38) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL3412015 1.00 CHRM2 (0.38) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL24478678 0.81 CHRM2 (0.38) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL15147091 0.76 CHRM2 (0.42) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL25618017 0.74 CHRM2 (0.33) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL74721 0.74 CHRM2 (0.33) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL23963192 0.73 CHRM2 (0.32) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL12990820 0.73 CHRM2 (0.48) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL18250835 0.73 CHRM2 (0.48) CHRM2CHRM1CHRM4CHRM5CHRM3
SCHEMBL14141163 0.72 CHRM2 (0.52) CHRM2CHRM1CHRM4CHRM5CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11009790-B2 Photoacid generator and photoresist composition including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-05-18 US disclosed
US-10948822-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-16 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-9086628-B2 Resist protective film-forming composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-21 US disclosed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US disclosed
US-20130084517-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-07 US disclosed
US-8252504-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-28 US disclosed
US-20110177455-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
EP-2090598-B1 Polymer, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2011-06-29 EP disclosed
US-20090208873-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME PAG1, CCNT1, NAT1 CHRM2 1121/4885CHRM1 339/4885CHRM4 2997/4885
US-20130034813-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS ARFIP2, ARF1, ARF4 CHRM2 4806/4885CHRM1 4844/4885CHRM4 4830/4885
US-11009790-B2 Photoacid generator and photoresist composition including the same PAG1, CCNT1, NAT1 CHRM2 1121/4885CHRM1 339/4885CHRM4 2997/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.