Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | PARG | Q86W56 | 1/20 | 0.31 |
| ▸ | TP53 | P04637 | 1/20 | 0.30 |
| ▸ | HBB | P68871 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL123316 | 0.92 | TP53 (0.34) | TP53HBBSMN1; SMN2 | |
| SCHEMBL6153134 | 0.92 | TP53 (0.34) | TP53HBBSMN1; SMN2 | |
| SCHEMBL10818548 | 0.82 | GABRP (0.32) | — | |
| SCHEMBL11189216 | 0.78 | APEX1 (0.36) | — | |
| SCHEMBL20090066 | 0.78 | PARG (0.46) | HTTPARG | |
| SCHEMBL11323944 | 0.78 | HTT (0.38) | HTTALDH1A1 | |
| SCHEMBL11184084 | 0.78 | CYP3A4 (0.55) | PARGSMN1; SMN2KDM4EALDH1A1 | |
| SCHEMBL11188385 | 0.78 | HTT (0.38) | HTTALDH1A1 | |
| SCHEMBL11183800 | 0.78 | CYP3A4 (0.55) | PARGSMN1; SMN2KDM4EALDH1A1 | |
| SCHEMBL5542385 | 0.78 | CYP1A2 (0.50) | PARGSMN1; SMN2ALDH1A1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8623745-B2 | Composition for forming gate insulating film for thin-film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-01-07 | — | — | US | disclosed |
| US-8623745-B2 | Composition for forming gate insulating film for thin-film transistor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-01-07 | — | — | US | disclosed |
| US-20110318907-A1 | COMPOSITION FOR FORMING GATE INSULATING FILM FOR THIN-FILM TRANSISTOR | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110318907-A1 | COMPOSITION FOR FORMING GATE INSULATING FILM FOR THIN-FILM TRANSISTOR | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-12-29 | — | — | US | disclosed |